CFY25-20

CFY25 INFINEON | Alldatasheet

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Semiconductor Group 1 of 8 Draft D, Sep. 00 00 HiRel X-Band GaAs Low Noise / General Purpose MESFET

• HiRel Discrete and Microwave Semiconductor
• For professional pre- and driver-amplifiers
• For frequencies from 500 MHz to 20 GHz
• Hermetically sealed microwave package
• Low noise figure, high gain, moderate power
• Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5613/008, Type Variant No.s 01 to 05 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package 1 2 3 4 CFY25-P (ql) CFY25-23 (ql) CFY25-23P (ql) CFY25-20 (ql) CFY25-20P (ql) - see below G S D S Micro-X CFY25-nnl: specifies noise, gain and output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Code: Q62703F120 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62703F119 (see order instructions for ordering example)

Semiconductor Group 2 of 8 Draft D, Sep. 00 00 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 5 V Drain-gate voltage VDG 7 V Gate-source voltage (reverse / forward) VGS - 5... + 0.5 V Drain current ID 80 mA Gate forward current IG 1.5 mA RF Input Power, C- and X-Band 1) PRF,in + 17 dBm Junction temperature TJ 175 °C Storage temperature range Tstg - 65... + 175 °C Total power dissipation 2) Ptot 250 mW Soldering temperature 3) Tsol 230 °C Thermal Resistance Junction-soldering point Rth JS ≤ 410 K/W Notes.: 1) For VDS ≤ 3 V. For VDS > 3 V, derating is required. 2) At TS = + 72.5 °C. For TS > + 72.5 °C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.

Semiconductor Group 3 of 8 Draft D, Sep. 00 00 Electrical Characteristics (at TA=25°C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 3 V, VGS = 0 V IDss 15 30 60 mA Gate threshold voltage VDS = 3 V, ID = 1 mA -VGth 0.3 1.0 3.0 V Drain current at pinch-off VDS = 3 V, VGS = - 4 V IDp - < 100 - µA Gate leakage current at pinch-off VDS = 3 V, VGS = - 4 V -IGp - < 100 200 µA Transconductance VDS = 3 V, ID = 15 mA gm15 35 40 - mS Gate leakage current at operation VDS = 3 V, ID = 15 mA -IG15 - < 1 2 µA Thermal resistance junction to soldering point Rth JS - 370 - K/W

Semiconductor Group 4 of 8 Draft D, Sep. 00 00 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Noise figure 1) VDS = 3 V, ID = 15 mA, f = 12 GHz NF dB CFY25-P - < 2.3 - CFY25-20, -20P - 1.9 2.1 CFY25-23, -23P - 2.2 2.4 Associated gain. 1) VDS = 3 V, ID = 15 mA, f = 12 GHz Ga dB CFY25-P - > 8.5 - CFY25-20, -20P 8.5 9 - CFY25-23, -23P 8.0 8.7 - Output power at 1 dB gain compression 2) VDS = 3 V, ID(RF off) = 20 mA, f = 12 GHz P1dB dBm CFY25-20, -23 - 15 - CFY25-20P, 23P, -P 14 15 - Linear power gain 2) VDS = 3 V, ID = 20 mA, f = 12 GHz, Pin = 0 dBm Glp dB CFY25-20 - 9.2 - CFY25-23 - 8.5 - CFY25-23P 8.0 8.5 - Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power / linear power gain characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning).

Semiconductor Group 5 of 8 Draft D, Sep. 00 00 Typical Common Source S-Parameters CFY25-20 VDS = 3 V, I D = 15 mA, Z o = 50 ? f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S 12 MAG [GHz] [magn [angle [magn [angle [magn [angle [magn [angle [magn] [dB] [dB] 0,5 0,958 -22 3,301 160 0,0170 71 0,683 -14 0,44 22,9 1,0 0,931 -28 3,208 155 0,0287 64 0,673 -18 0,50 20,5 1,5 0,901 -36 3,107 148 0,0398 59 0,660 -23 0,54 18,9 2,0 0,875 -45 3,016 139 0,0502 53 0,648 -29 0,56 17,8 2,5 0,858 -56 2,950 130 0,0602 47 0,635 -35 0,55 16,9 3,0 0,838 -67 2,877 120 0,0691 42 0,621 -41 0,56 16,2 3,5 0,815 -78 2,795 111 0,0767 36 0,603 -48 0,58 15,6 4,0 0,794 -88 2,708 102 0,0834 31 0,590 -54 0,61 15,1 4,5 0,776 -98 2,621 93 0,0893 25 0,573 -60 0,64 14,7 5,0 0,760 -108 2,537 84 0,0939 20 0,562 -67 0,66 14,3 5,5 0,746 -117 2,451 76 0,0975 15 0,549 -73 0,69 14,0 6,0 0,732 -126 2,365 68 0,1000 10 0,539 -80 0,72 13,7 6,5 0,718 -135 2,281 60 0,1017 5 0,529 -86 0,77 13,5 7,0 0,703 -143 2,202 52 0,1035 1 0,521 -91 0,81 13,3 7,5 0,689 -150 2,133 45 0,1049 -3 0,511 -96 0,87 13,1 8,0 0,674 -158 2,072 38 0,1056 -6 0,504 -101 0,92 12,9 8,5 0,661 -166 2,020 30 0,1063 -10 0,495 -106 0,97 12,8 9,0 0,650 -174 1,976 23 0,1068 -13 0,484 -111 1,02 12,7 11,7 9,5 0,640 178 1,933 16 0,1076 -16 0,474 -116 1,06 12,5 11,0 10,0 0,629 170 1,896 9 0,1080 -20 0,463 -121 1,11 12,4 10,4 10,5 0,620 162 1,859 2 0,1084 -23 0,452 -127 1,16 12,3 9,9 11,0 0,613 153 1,826 -5 0,1090 -26 0,443 -133 1,19 12,2 9,6 11,5 0,607 145 1,797 -13 0,1097 -29 0,436 -140 1,22 12,1 9,3 12,0 0,600 137 1,767 -20 0,1105 -33 0,431 -147 1,24 12,0 9,1 12,5 0,593 130 1,738 -27 0,1114 -36 0,426 -153 1,27 11,9 8,8 13,0 0,587 122 1,708 -34 0,1125 -40 0,421 -159 1,30 11,8 8,5 13,5 0,580 114 1,678 -41 0,1138 -43 0,419 -166 1,32 11,7 8,3 14,0 0,575 106 1,651 -49 0,1149 -47 0,417 -172 1,34 11,6 8,1 14,5 0,572 98 1,627 -56 0,1161 -51 0,413 -178 1,36 11,5 7,9 15,0 0,568 90 1,607 -63 0,1180 -55 0,410 176 1,37 11,3 7,7 15,5 0,565 82 1,589 -70 0,1198 -59 0,408 170 1,37 11,2 7,6 16,0 0,565 73 1,570 -78 0,1219 -64 0,404 164 1,37 11,1 7,5 16,5 0,564 65 1,552 -86 0,1242 -69 0,402 157 1,36 11,0 7,4 17,0 0,564 57 1,548 -92 0,1266 -74 0,398 152 1,35 10,9 7,4 17,5 0,564 51 1,554 -98 0,1292 -78 0,396 147 1,32 10,8 7,4 18,0 0,567 47 1,562 -102 0,1319 -81 0,394 143 1,28 10,7 7,6

Semiconductor Group 6 of 8 Draft D, Sep. 00 00 Typical Common Source S-Parameters CFY25-20 (continued) VDS = 3 V, I D = 30 mA, Z o = 50 ? f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S 12 MAG [GHz] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [dB] [dB] 0,5 0,953 -24 3,987 159 0,0140 74 0,657 -15 0,49 24,5 1,0 0,921 -30 3,858 153 0,0246 67 0,647 -18 0,53 22,0 1,5 0,892 -39 3,714 146 0,0346 60 0,634 -23 0,56 20,3 2,0 0,861 -49 3,583 138 0,0444 55 0,621 -28 0,59 19,1 2,5 0,836 -60 3,484 128 0,0543 49 0,608 -35 0,58 18,1 3,0 0,814 -72 3,374 118 0,0621 43 0,594 -41 0,60 17,4 3,5 0,790 -83 3,254 108 0,0684 38 0,576 -47 0,63 16,8 4,0 0,768 -94 3,129 99 0,0736 32 0,557 -53 0,67 16,3 4,5 0,749 -104 3,007 90 0,0779 27 0,541 -59 0,70 15,9 5,0 0,731 -114 2,890 82 0,0810 22 0,527 -65 0,74 15,5 5,5 0,714 -124 2,776 73 0,0844 18 0,515 -72 0,78 15,2 6,0 0,699 -133 2,662 65 0,0863 14 0,505 -78 0,83 14,9 6,5 0,683 -141 2,556 57 0,0880 10 0,498 -84 0,88 14,6 7,0 0,669 -149 2,458 50 0,0893 6 0,492 -89 0,93 14,4 7,5 0,657 -157 2,374 42 0,0904 3 0,486 -94 0,98 14,2 8,0 0,645 -165 2,299 35 0,0918 0 0,480 -99 1,02 14,0 13,1 8,5 0,632 -173 2,233 28 0,0933 -2 0,474 -103 1,07 13,8 12,2 9,0 0,620 179 2,174 21 0,0945 -5 0,467 -108 1,11 13,6 11,6 9,5 0,609 171 2,120 14 0,0960 -8 0,459 -112 1,15 13,4 11,1 10,0 0,600 163 2,071 7 0,0976 -10 0,453 -118 1,18 13,3 10,7 10,5 0,592 154 2,026 0 0,0990 -13 0,446 -123 1,21 13,1 10,4 11,0 0,586 146 1,984 -7 0,1006 -16 0,441 -129 1,23 12,9 10,1 11,5 0,579 138 1,947 -14 0,1026 -19 0,436 -136 1,24 12,8 9,8 12,0 0,574 130 1,910 -21 0,1047 -22 0,432 -142 1,25 12,6 9,6 12,5 0,571 123 1,876 -29 0,1066 -25 0,428 -149 1,26 12,5 9,4 13,0 0,566 115 1,842 -36 0,1088 -28 0,425 -155 1,27 12,3 9,2 13,5 0,563 107 1,806 -43 0,1108 -32 0,424 -161 1,28 12,1 9,0 14,0 0,561 99 1,774 -50 0,1140 -35 0,422 -167 1,27 11,9 8,8 14,5 0,559 91 1,745 -57 0,1170 -39 0,421 -173 1,26 11,7 8,7 15,0 0,556 83 1,719 -64 0,1199 -43 0,419 -179 1,26 11,6 8,5 15,5 0,556 75 1,698 -72 0,1229 -48 0,417 175 1,24 11,4 8,4 16,0 0,556 66 1,676 -79 0,1257 -53 0,414 168 1,23 11,2 8,3 16,5 0,557 58 1,653 -87 0,1286 -58 0,412 162 1,23 11,1 8,2 17,0 0,559 50 1,646 -93 0,1320 -63 0,410 157 1,20 11,0 8,3 17,5 0,561 45 1,649 -99 0,1350 -67 0,409 152 1,16 10,9 8,4 18,0 0,565 40 1,656 -103 0,1376 -71 0,407 148 1,13 10,8 8,6

Semiconductor Group 7 of 8 Draft D, Sep. 00 00 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: CFY25- (nnl) (ql) (nnl): Noise/Gain/Power Level (ql): Quality Level Ordering Example: Ordering Code: Q62703F119 CFY25-20P For CFY25, Noise/Gain/Power Level 20P: NF < 2.1dB, Ga > 8.5 dB, P1dB > 14 dBm @ 12 GHz in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division : Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@siemens-scg.com Address: Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich

Semiconductor Group 8 of 8 Draft D, Sep. 00 00 Micro-X Package Published by Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D- 81617 Munich. ã Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000).