CFH120 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • low noise pseudomorphic HEMT with high associated gain
  • low cost plastic package
  • for low noise front end amplifiers up to 20 GHz
  • For DBS down converters
  • Fully RF tested at 12 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! 1 = source 2 = drain 3 = source 4 = gate Type Marking Ordering Code (taped) Package CFH120-06 H5s Q62705-K0671 MW-4 CFH120-08 H3s Q62705-K0603 MW-4 CFH120-10 H4s Q62705-K0604 MW-4 Maximum Ratings Characteristics Symbol Max. Value Unit Drain-source voltage VDS 3.0 V Drain-gate voltage VDG 4.0 V Gate-source voltage VGS -2.0 V Drain current ID 40 mA Channel temperature TCh 150 °C Operating temperature Top -30 ... +85 °C Storage temperature range Tstg -65 ... +150 °C Total power dissipation (TS < 51°C) 1) Ptot 180 mW Thermal resistance Channel-soldering point source RthChS 690 K/W 1) TS: Temperature measured at soldering point

Infineon Technologies AG page 2/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12

Electrical Characteristics

unless otherwise specified: Ta = 25°C; VDD= 2V, fRF = 12.0GHz; ZS= Γ opt, ZL = S22*; Characteristics Symbol min typ max Unit Drain-source saturation current VDS = 2 V VGS = 0 V IDSS 0 15 35 mA Pinch-off voltage VDS = 2 V ID = 120 µA Gate leakage current VDS = 2 V ID = 10 mA IG - 0.05 2 µA Transconductance VDS = 2 V ID = 10 mA gm - 60 - mS Noise figure* VDS = 2 V ID = 10 mA f = 12 GHz CFH120-06 CFH120-08 CFH120-10 F - 0.50 0.65 0.85 0.60 0.80 1.0 dB Associated gain* VDS = 2 V ID = 10 mA f = 12 GHz CFH120-06 CFH120-08 CFH120-10 Ga 11.5 11.5 10.5 12.5 12.0 11.0 dB * IMPORTANT NOTE: During production, the DC and RF parameters of all devices are tested according to the specification table above.

Infineon Technologies AG page 3/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-06 Common Source Noise – Parameters (V DD=2V, ID=10mA, Z0=50Ω ) Freq [GHz] Mag Phase 2.0 0.842 27.2 4.0 0.720 55.0 6.0 0.612 82.6 8.0 0.499 126.8 10.0 0.413 -173.1 12.0 0.450 -120.8 14.0 0.582 -90.9 Fmin Ga Gopt Rn/Z0 0.60 [dB] 0.35 0.38 0.40 [dB] 0.43 0.47 0.51 0.039 0.060 0.134 0.375 0.256 0.155 0.080 13.7 12.6 11.7 20.8 17.9 16.2 14.8 Noise figure/associated gain @ Γ opt Equivalent noise resistance 2 4 6 8 10 12 14 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 freq, GHz NFmin Gass 2 4 6 8 10 12 14 freq, GHz Rn Optimum source reflection coefficient Noise and gain circles at 12GHz freq (2.000GHz to 14.00GHz) Sopt freq=12GHz noise circles: 0.52dB, 0.55dB,0.6dB gain circles: 12dB, 13dB, 14dB cir_pts (0.000 to 51.000) noise_circles gain_circles

Infineon Technologies AG page 4/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-06 Common Source S – Parameters (V DD=2V, ID=0mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 5/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-06 Common Source S – Parameters (V DD=2V, ID=5mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 6/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-06 Common Source S – Parameters (V DD=2V, ID=10mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 7/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-06 Common Source S – Parameters (V DD=2V, ID=15mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 8/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-06 Common Source S – Parameters (V DD=2V, ID=20mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 9/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-08 Common Source Noise – Parameters (V DD=2V, ID=10mA, Z0=50Ω ) Freq [GHz] Mag Phase 2.0 0.875 26.8 4.0 0.761 56.0 6.0 0.623 82.3 8.0 0.499 124.8 10.0 0.413 -178.1 12.0 0.450 -120.8 14.0 0.582 -90.9 Fmin Ga Gopt Rn/Z0 [dB] 0.57 0.63 0.71 [dB] 0.40 0.44 0.46 0.52 20.4 17.6 15.7 14.3 13.2 12.3 11.5 0.399 0.283 0.176 0.095 0.040 0.042 0.099 Noise figure/associated gain @ Γ opt Equivalent noise resistance 2 4 6 8 10 12 14 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 freq, GHz NFmin Gass 2 4 6 8 10 12 14 freq, GHz Rn Optimum source reflection coefficient Noise and gain circles at 12GHz freq (2.000GHz to 14.00GHz) Sopt freq=12GHz noise circles: 0.65dB, 0.7dB, 0.75dB, 0.8dB gain circles: 11.5dB, 12dB, 13dB, 14dB cir_pts (0.000 to 51.000) noise_circles gain_circles

Infineon Technologies AG page 10/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-08 Common Source S – Parameters (V DD=2V, ID=0mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 11/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-08 Common Source S – Parameters (V DD=2V, ID=5mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 12/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-08 Common Source S – Parameters (V DD=2V, ID=10mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 13/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-08 Common Source S – Parameters (V DD=2V, ID=15mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 14/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-08 Common Source S – Parameters (V DD=2V, ID=20mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 15/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-10 Common Source S – Parameters (V DD=2V, ID=0mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 16/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-10 Common Source S – Parameters (V DD=2V, ID=5mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 17/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-10 Common Source S – Parameters (V DD=2V, ID=10mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 18/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-10 Common Source S – Parameters (V DD=2V, ID=15mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 19/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Typical Measured Data CFH120-10 Common Source S – Parameters (V DD=2V, ID=20mA, Z0=50Ω ) Freq [GHz] Mag Phase Mag Phase Mag Phase Mag Phase S11 S21 S12 S22

Infineon Technologies AG page 20/20 Wireless Solutions Rev. 3.0/January 11th, 2002 WS TI DS 12 Semiconductor Device Outline MW-4 Approx. weight: 0.02 g Published by Infineon Technologies AG, Marketing-Communication, St.-Martin- Strasse 53, D-81541 Munich. copyright Infineon Technologies AG 1999, 2002. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and cirucits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office. Infineon Technologies AG is an approved CECC manufacturer.