CF5010HK1-1

Nippon Precision Circui...

Crystal Oscillator Module ICs

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SEIKO NPC CORPORATION —1 Crystal Oscillator Module ICs OVERVIEW The SM5010 series are crystal oscillator module ICs. They incorporate oscillator and output buffer circuits, employing built-in oscillator capacitors and feedback resistors with excellent frequency response, eliminating the need for external components to form a stable crystal oscillator. There are 7 oscillator conﬁgurations available for design and application optimization.

FEATURES

I 7 types of oscillation circuit structure For fundamental oscillator

5010A :Simple structure with low frequency vari- ation
5010B :Low crystal current type with R D built-in oscillation circuit
5010CL :Oscillation stop function built-in
5010DN :External capacitors, C G and C D required
5010EA :Low current consumption type For 3rd overtone oscillator
5010F :Suitable for round blank
5010H :External resistor, R f required I 2.7 to 5.5V operating supply voltage I Capacitors C G , C D built-in I Inverter ampliﬁer feedback resistor built-in I Output duty level
TTL level: AK , BK , HK
CMOS level: AN , AH , BN , BH , CL , DN EA , FN , FH , HN I Oscillator frequency output (f O , f O /2, f O /4, f O /8, f O /16 determined by internal connection) I Standby function I Pull-up resistor built-in I 8-pin SOP (SM5010 ××× I Chip form (CF5010 ××× SERIES CONFIGURATION For Fundamental Oscillator Version Operating supply voltage range [V] Built-in capacitance R D Ω Output current DD = 5V) [mA] Output duty level Output frequency INHN input level DD = 5V) Standby mode C G [pF] C D [pF] Oscillator stop function Output state CF5010AN1 2.7 to 5.5 29 29 – 16 CMOS f O TTL No High impedance CF5010AN2 CMOS/TTL f O CF5010AN3 f O CF5010AN4 f O CF5010AK1 4.5 to 5.5 29 29 – 16 TTL f O TTL No High impedance CF5010AH1 2.7 to 5.5 29 29 – 4 CMOS f O TTL No High impedance CF5010AH2 f O CF5010AH3 f O CF5010AH4 f O CF5010BN1 2.7 to 5.5 22 22 820 16 CMOS f O TTL No High impedance CF5010BN2 CMOS/TTL f O CF5010BN3 f O CF5010BN4 f O CF5010BN5 f O /16 CF5010BK1 4.5 to 5.5 22 22 820 16 TTL f O TTL No High impedance CF5010BH1 2.7 to 5.5 22 22 820 4 CMOS f O TTL No High impedance CF5010BH2 f O CF5010BH3 f O CF5010BH4 f O CF5010CL1 2.7 to 5.5 18 18 – 16 CMOS f O CMOS Y es High impedance CF5010CL2 f O CF5010CL3 f O CF5010CL4 f O CF5010CL5 f O /16 CF5010DN1 2.7 to 5.5 – – 820 16 CMOS f O TTL No High impedance CF5010EA1 2.7 to 5.5 10 15 820 4 CMOS f O TTL Y es LOW CF5010EA2 f O 1. Package devices have designation SM5010 ×××

SEIKO NPC CORPORATION —2 SERIES CONFIGURATION For 3rd Overtone Oscillator

ORDERING INFORMATION

(Unit: mm) 8-pin SOP Version Operating supply voltage range [V] gm ratio Built-in capacitance R f Ω Output current DD = 5V) [mA] Output duty levelC G [pF] C D [pF] CF5010FNA 2.7 to 5.5 1.00 13 15 4.2

16 CMOS

CF5010FNC 11 17 3.1 CF5010FND 13 17 2.2 CF5010FNE 4.5 to 5.5 8 15 2.2 CF5010FHA 4.5 to 5.5 1.00 13 15 4.2

4 CMOS

CF5010FHC 11 17 3.1 CF5010FHD 13 17 2.2 CF5010FHE 8 15 2.2 CF5010HN1 4.5 to 5.5 1.17 13 17 200 16 CMOS CF5010HK1 4.5 to 5.5 1.17 13 17 200 16 TTL Device Package SM5010 ××× S 8-pin SOP CF5010 ××× –1 Chip form 4.4 0.2 1.5 0.1 0.05 0.05 0.4 0.2 5.2 0.3 0.4 0.1 0.15 + 0.1 − 0.05 0 to 10 6.2 0.3 0.695typ 1.27 0.12 M 0.10

SEIKO NPC CORPORATION —3 PAD LAYOUT (Unit: µ PINOUT (Top view) PIN DESCRIPTION and PAD DIMENSIONS Chip size: 0.92 1.18mm Chip thickness: 300 ± 30µm Chip base: V DD level QVDD XT VSS(0,0) (920,1180) X Y INHN XTN HA5010 1 XT VSS Q VDD 3 NC NC XTN INHN Number Name I/O Description Pad dimensions [µm] XY

1 INHN I

Output state control input. Standby mode when LOW, pull-up resistor built in. In the case of the 5010CL , the oscillator stops and Power-saving pull-up resistor is built-in to reduce current consumption at standby mode. 195 174.4 2 XT I Ampliﬁer input. Crystal oscillator connection pins. Crystal oscillator connected between XT and XTN 385 174.4 3 XTN O Ampliﬁer output. 575 174.4 4 VSS – Ground 765 174.4 5QO Output. Output frequency (f O , f O /2, f O /4, f O /8, f O /16) determined by internal connection 757.6 1017.6

6 NC – No connection – –

7 NC – No connection – –

8 VDD – Supply voltage 165.4 1014.6

SEIKO NPC CORPORATION —4 BLOCK DIAGRAM For Fundamental Oscillator I 5010A , B , CL , DN , EA series For 3rd Overtone Oscillator I 5010F , H series XT VSSVDD Q CG CD Rf XTN INHN 1/2 1/2 1/2RD XT VSSVDD Q CG CD Rf XTN INHN

SEIKO NPC CORPORATION —5 FUNCTIONAL DESCRIPTION Standby Function 5010AH , AK , AN , BH , BK , BN , DN ×, FN×, FH×, HN×, HK× series When INHN goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop. 5010CL× series When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance. 5010EA× series When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes LOW. Power-saving Pull-up Resistor (CL series only) The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby. Version INHN Q Oscillator AH×, AK×, AN×, BH×, BK×, BN×, DN×, FH×, FH×, HN×, HK× series HIGH (or open) Any f O, fO/2, fO/4, fO/8 or fO/16 output frequency Normal operation LOW High impedance Normal operation CL× series HIGH (or open) Any f O, fO/2, fO/4, fO/8 or fO/16 output frequency Normal operation LOW High impedance Stopped EA× series HIGH (or open) Either f O or fO/2 output frequency Normal operation LOW LOW Stopped

SEIKO NPC CORPORATION —6 SPECIFICATIONS Absolute Maximum Ratings VSS = 0V Recommended Operating Conditions 3V operation VSS = 0V Parameter Symbol Condition Rating Unit Supply voltage range V DD −0.5 to +7.0 V Input voltage range V IN −0.5 to VDD + 0.5 V Output voltage range V OUT −0.5 to VDD + 0.5 V Operating temperature range T opr −40 to +85 °C Storage temperature range T stg Chip form −65 to +150 8-pin SOP −55 to +125 Output current I OUT AH×, BH×, FH×, EA× 10 mAAN×, AK×, BN×, BK×, CL×, DN×, FN×, HN×, HK× 25 Power dissipation P D 8-pin SOP 500 mW Parameter Symbol Version Condition Rating Unit Operating supply voltage V DD All version 2.7 to 3.6 V Input voltage V IN All version V SS to VDD V Operating temperature T OPR 5010AN× −10 to +70 5010AH× 5010BN× 5010BH× 5010CL×− 20 to +80 5010DN1 −10 to +705010EA× 5010FN× Operating frequency f 5010AN× CL ≤ 15pF 2 to 30 MHz 5010AH× 2 to 16 5010BN× 2 to 30 5010BH× 2 to 16 5010CL× 2 to 305010DN1 5010EA× 5010FN× 22 to 40

SEIKO NPC CORPORATION —7 5V operation VSS = 0V Parameter Symbol Version Condition Rating Unit Operating supply voltage V DD All version 4.5 to 5.5 V Input voltage V IN All version V SS to VDD V Operating temperature T OPR 5010AN× −40 to +85 5010AK× 5010AH× 5010BN× 5010BK× 5010BH× 5010CL× 5010DN1 5010EA× CL ≤ 15pF , f = 2 to 30MHz CL ≤ 15pF , f = 2 to 40MHz −10 to +70 5010FN× CL ≤ 50pF , 30MHz ≤ f ≤ 50MHz −20 to +80 CL ≤ 15pF , 50MHz ≤ f ≤ 70MHz −15 to +75 5010FH× CL ≤ 15pF , 30MHz ≤ f ≤ 50MHz −20 to +80 CL ≤ 15pF , 50MHz ≤ f ≤ 60MHz −15 to +75 5010HN1 −40 to +85 5010HK1 Operating frequency f 5010AN× CL ≤ 50pF 2 to 30 MHz 5010AK× CL ≤ 15pF 5010AH× 5010BN× CL ≤ 50pF 5010BK× CL ≤ 15pF 5010BH× 5010CL× CL ≤ 50pF 5010DN1 5010EA× CL ≤ 15pF , Ta = − 40 to + 85°C 2 to 40 5010FN× CL ≤ 50pF , Ta = − 20 to + 80°C 30 to 50 CL ≤ 15pF , Ta = − 15 to + 75°C 50 to 70 5010FH× CL ≤ 15pF , Ta = − 20 to + 80°C 30 to 50 CL ≤ 15pF , Ta = − 15 to + 75°C 50 to 60 5010HN1 C L ≤ 50pF 22 to 50 5010HK1 C L ≤ 15pF

SEIKO NPC CORPORATION —8

Electrical Characteristics

5010AN×, BN×, DN× series 3V operation: VDD = 2.7 to 3.6V , VSS = 0V , Ta = −10 to +70°C unless otherwise noted. 5010AN×, AK×, BN×, BK×, DN× series 5V operation: VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA 2.1 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 2.0 – – V LOW-level input voltage V IL INHN – – 0.5 V Output leakage current I Z Q: Measurement cct 2, INHN = LOW, VDD = 3.6V VOH = VDD –– 1 0 µA VOL = VSS –– 1 0 Current consumption I DD Measurement cct 3, load cct 1, INHN = open, CL = 15pF , f = 30MHz 5010×N1 – 5 10 mA 5010×N2 – 3.5 7 5010×N3 – 2.5 5 5010×N 4 –24 5010×N 5 –24 INHN pull-up resistance R UP2 Measurement cct 4 40 100 250 k Ω Feedback resistance R f Measurement cct 5 80 200 500 k Ω Oscillator ampliﬁer output resistance RD Design value 5010B ×× 690 820 940 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 5010A×× 26 29 32 pF 5010B×× 20 22 24 CD 5010A×× 26 29 32 5010B×× 20 22 24 Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA 3.9 4.2 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 2.0 – – V LOW-level input voltage V IL INHN – – 0.8 V Output leakage current I Z Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD –– 1 0 µA VOL = VSS –– 1 0 Current consumption I DD Measurement cct 3, load cct 1, INHN = open, CL = 50pF , f = 30MHz 5010×N1 – 15 30 mA 5010×N2 – 9 18 5010×N3 – 6 12 5010×N4 – 5 10 5010×N5 – 5 10 Measurement cct 3, load cct 2, INHN = open, CL = 15pF , f = 30MHz 5010×K1 – 10 20 INHN pull-up resistance R UP2 Measurement cct 4 40 100 250 k Ω Feedback resistance R f Measurement cct 5 80 200 500 k Ω Oscillator ampliﬁer output resistance RD Design value 5010B ×× 690 820 940 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 5010A×× 26 29 32 pF 5010B×× 20 22 24 CD 5010A×× 26 29 32 5010B×× 20 22 24

SEIKO NPC CORPORATION —9 5010AH×, BH× series 3V operation: VDD = 2.7 to 3.6V , VSS = 0V , Ta = −10 to +70°C unless otherwise noted. 5V operation: VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 2mA 2.1 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 2mA – 0.3 0.5 V HIGH-level input voltage V IH INHN 2.0 – – V LOW-level input voltage V IL INHN – – 0.5 V Output leakage current I Z Q: Measurement cct 2, INHN = LOW, VDD = 3.6V VOH = VDD –– 1 0 µA VOL = VSS –– 1 0 Current consumption I DD Measurement cct 3, load cct 1, INHN = open, CL = 15pF , f = 16MHz 5010×H 1 –36 mA 5010×H 2 –24 5010×H3 – 1.5 3 5010×H4 – 1.5 2.5 INHN pull-up resistance R UP2 Measurement cct 4 40 100 250 k Ω Feedback resistance R f Measurement cct 5 80 200 500 k Ω Oscillator ampliﬁer output resistance RD Design value 5010B ×× 690 820 940 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 5010A×× 26 29 32 pF 5010B×× 20 22 24 CD 5010A×× 26 29 32 5010B×× 20 22 24 Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 4.5V, IOH = 4mA 3.9 4.2 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 4.5V, IOL = 4mA – 0.3 0.5 V HIGH-level input voltage V IH INHN 2.0 – – V LOW-level input voltage V IL INHN – – 0.8 V Output leakage current I Z Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD –– 1 0 µA VOL = VSS –– 1 0 Current consumption I DD Measurement cct 3, load cct 1, INHN = open, CL = 15pF , f = 30MHz 5010×H1 – 9 18 mA 5010×H2 – 6 12 5010×H3 – 5 10 5010×H 4 –48 INHN pull-up resistance R UP2 Measurement cct 4 40 100 250 k Ω Feedback resistance R f Measurement cct 5 80 200 500 k Ω Oscillator ampliﬁer output resistance RD Design value 5010B ×× 690 820 940 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 5010A×× 26 29 32 pF 5010B×× 20 22 24 CD 5010A×× 26 29 32 5010B×× 20 22 24

SEIKO NPC CORPORATION —10 5010CL× series 3V operation: VDD = 2.7 to 3.6V , VSS = 0V , Ta = −20 to +80°C unless otherwise noted. 5V operation: VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA 2.2 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW, VDD = 3.6V VOH = VDD –– 1 0 µA VOL = VSS –– 1 0 Current consumption I DD Measurement cct 3, load cct 1, INHN = open, CL = 15pF , f = 30MHz 5010CL1 – 5 10 mA 5010CL2 – 3.5 7 5010CL3 – 2.5 5 5010CL4 – 2 4 5010CL5 – 2 4 Standby current I ST Measurement cct 6, INHN = LOW – – 5 µA INHN pull-up resistance RUP1 Measurement cct 4 2 4 15 M Ω RUP2 40 100 250 k Ω Feedback resistance R f Measurement cct 5 80 200 500 k Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 16 18 20 pF CD 16 18 20 Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA 4.0 4.2 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD –– 1 0 µA VOL = VSS –– 1 0 Current consumption I DD Measurement cct 3, load cct 1, INHN = open, CL = 50pF , f = 30MHz 5010CL1 – 15 30 mA 5010CL2 – 9 18 5010CL3 – 6 12 5010CL4 – 5 10 5010CL5 – 5 10 Standby current I ST Measurement cct 6, INHN = LOW – – 10 µA INHN pull-up resistance RUP1 Measurement cct 4

128 M Ω

RUP2 40 100 250 k Ω Feedback resistance R f Measurement cct 5 80 200 500 k Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 16 18 20 pF CD 16 18 20

SEIKO NPC CORPORATION —11 5010EA× series 3V operation: VDD = 2.7 to 3.6V , VSS = 0V , Ta = −10 to +70°C unless otherwise noted. 5V operation: VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 2mA 2.1 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 2mA – 0.3 0.5 V HIGH-level input voltage V IH INHN 2.0 – – V LOW-level input voltage V IL INHN – – 0.5 V Current consumption I DD Measurement cct 3, load cct 1, INHN = open, CL = 15pF , f = 30MHz 5010EA1 – 4 8 mA 5010EA2 – 2.5 5 INHN pull-up resistance R UP2 Measurement cct 4 40 100 250 k Ω Feedback resistance R f Measurement cct 5 80 200 500 k Ω Oscillator ampliﬁer output resistance RD Design value 690 820 940 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 91 0 1 1 pF CD 13 15 17 Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 4.5V, IOH = 3.2mA 3.9 4.2 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 4.5V, IOL = 3.2mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 2.0 – – V LOW-level input voltage V IL INHN – – 0.8 V Current consumption IDD1 Measurement cct 3, load cct 1, INHN = open, CL = 15pF , f = 30MHz 5010EA1 – 6 12 mA 5010EA2 – 5 10 IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 15pF , f = 40MHz 5010EA1 – 9 18 5010EA2 – 6 12 INHN pull-up resistance R UP2 Measurement cct 4 40 100 250 k Ω Feedback resistance R f Measurement cct 5 80 200 500 k Ω Oscillator ampliﬁer output resistance RD Design value 690 820 940 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 91 0 1 1 pF CD 13 15 17

SEIKO NPC CORPORATION —12 5010FN× series 3V operation: VDD = 2.7 to 3.6V , VSS = 0V , Ta = −10 to +70°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA 2.2 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 2.0 – – V LOW-level input voltage V IL INHN – – 0.5 V Output leakage current I Z Q: Measurement cct 2, INHN = LOW, VDD = 3.6V VOH = VDD –– 1 0 µA VOL = VSS –– 1 0 Current consumption I DD Measurement cct 3, load cct 1, INHN = open, CL = 15pF 5010FNA, FNC f = 30MHz –8 1 6 mA 5010FND f = 40MHz –1 0 2 0 INHN pull-up resistance R UP Measurement cct 4 40 100 250 k Ω Feedback resistance R f Measurement cct 5 5010FNA 3.57 4.2 4.83 kΩ5010FNC 2.63 3.1 3.57 5010FND 1.87 2.2 2.53 Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 5010FNA 11.7 13 14.3 pF 5010FNC 9.9 11 12.1 5010FND 11.7 13 14.3 CD 5010FNA 13.5 15 16.5 5010FNC 15.3 17 18.7 5010FND 15.3 17 18.7

SEIKO NPC CORPORATION —13 5V operation: VDD = 4.5 to 5.5V , VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA 3.9 4.2 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 2.0 – – V LOW-level input voltage V IL INHN – – 0.8 V Output leakage current I Z Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD –– 1 0 µA VOL = VSS –– 1 0 Current consumption IDD1 Measurement cct 3, load cct 1, INHN = open, CL = 15pF 5010FNE f = 70MHz –2 5 5 0 mA IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 50pF 5010FNA, FNC f = 40MHz –2 3 4 5 5010FND f = 50MHz –2 5 5 0 INHN pull-up resistance R UP Measurement cct 4 40 100 250 k Ω Feedback resistance R f Measurement cct 5 5010FNA 3.57 4.2 4.83 kΩ 5010FNC 2.63 3.1 3.57 5010FND 1.87 2.2 2.53 5010FNE 1.87 2.2 2.53 Built-in capacitance C G Design value. A monitor pattern on a wafer is tested. 5010FNA 11.7 13 14.3 pF 5010FNC 9.9 11 12.1 5010FND 11.7 13 14.3 5010FNE 7.2 8 8.8 C D 5010FNA 13.5 15 16.5 5010FNC 15.3 17 18.7 5010FND 15.3 17 18.7 5010FNE 13.5 15 16.5

SEIKO NPC CORPORATION —14 5010FH× series 5V operation: VDD = 4.5 to 5.5V , VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted. 5010HN×, HK× series 5V operation: VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 4.5V, IOH = 4mA 3.9 4.2 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 4.5V, IOL = 4mA – 0.3 0.5 V HIGH-level input voltage V IH INHN 2.0 – – V LOW-level input voltage V IL INHN – – 0.8 V Output leakage current I Z Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD –– 1 0 µA VOL = VSS –– 1 0 Current consumption I DD Measurement cct 3, load cct 1, INHN = open, CL = 15pF 5010FHA, FHC f = 40MHz –1 3 2 6 mA5010FHD f = 50MHz –1 5 3 0 5010FHE f = 60MHz –1 7 3 4 INHN pull-up resistance R UP Measurement cct 4 40 100 250 k Ω Feedback resistance R f Measurement cct 5 5010FHA 3.57 4.2 4.83 kΩ 5010FHC 2.63 3.1 3.57 5010FHD 1.87 2.2 2.53 5010FHE 1.87 2.2 2.53 Built-in capacitance C G Design value. A monitor pattern on a wafer is tested. 5010FHA 11.7 13 14.3 pF 5010FHC 9.9 11 12.1 5010FHD 11.7 13 14.3 5010FHE 7.2 8 8.8 C D 5010FHA 13.5 15 16.5 5010FHC 15.3 17 18.7 5010FHD 15.3 17 18.7 5010FHE 13.5 15 16.5 Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA 3.9 4.2 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 2.0 – – V LOW-level input voltage V IL INHN – – 0.8 V Output leakage current I Z Q: Measurement cct 2, INHN = LOW, VDD = 5.5V VOH = VDD –– 1 0 µA VOL = VSS –– 1 0 Current consumption IDD1 Measurement cct 3, load cct 2, INHN = open, CL = 15pF , f = 50MHz 5010HK1 – 20 40 mA IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 50pF , f = 50MHz 5010HN1 – 25 50 INHN pull-up resistance R UP Measurement cct 4 40 100 250 k Ω Feedback resistance R f Measurement cct 5 80 200 500 k Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 11.7 13 14.3 pF CD 15.3 17 18.7

SEIKO NPC CORPORATION —15 Switching Characteristics 5010AN×, BN×, DN× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V , VSS = 0V , Ta = −10 to +70°C unless otherwise noted. 5010AN×, AK×, BN×, BK×, DN× series 5V operation/Duty level: CMOS (5010AN×, BN×, DN1) VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. 5V operation/Duty level: TTL (5010×K1, AN2, AN3, AN4, BN2, BN3, BN4, BN5) VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time t r1 Measurement cct 6, load cct 1, CL = 15pF , 0.1VDD to 0.9VDD – 3.0 6.0 ns Output fall time t f1 Measurement cct 6, load cct 1, CL = 15pF , 0.9VDD to 0.1VDD – 3.0 6.0 ns Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF , f = 30MHz 4 0–6 0 % Output disable delay time t PLZ Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time t PZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 2.0 4.0 ns tr2 CL = 50pF – 4.0 8.0 Output fall time tf1 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 2.0 4.0 ns tf2 CL = 50pF – 4.0 8.0 Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 50pF , f = 30MHz 4 5–5 5 % Output disable delay time t PLZ Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time t PZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time t r3 Measurement cct 6, load cct 2, CL = 15pF , 0.4V to 2.4V – 1.5 3.0 ns Output fall time t f3 Measurement cct 6, load cct 2, CL = 15pF , 2.4V to 0.4V – 1.5 3.0 ns Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF , f = 30MHz 4 5–5 5 % Output disable delay time t PLZ Measurement cct 7, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time t PZL – – 100 ns

SEIKO NPC CORPORATION —16 5010AH×, BH× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V , VSS = 0V , Ta = −10 to +70°C unless otherwise noted. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time t r1 Measurement cct 6, load cct 1, CL = 15pF , 0.1VDD to 0.9VDD – 8 16 ns Output fall time t f1 Measurement cct 6, load cct 1, CL = 15pF , 0.9VDD to 0.1VDD – 8 16 ns Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF , f = 16MHz 4 0–6 0 % Output disable delay time t PLZ Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time t PZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 5 10 ns tr2 CL = 50pF – 13 26 Output fall time tf1 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 5 10 ns tf2 CL = 50pF – 13 26 Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF , f = 30MHz 4 5–5 5 % Output disable delay time t PLZ Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time t PZL – – 100 ns

SEIKO NPC CORPORATION —17 5010CL× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V , VSS = 0V , Ta = −20 to +80°C unless otherwise noted. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 2.0 4.0 ns tr4 CL = 30pF – 3.0 6.0 Output fall time tf1 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 2.0 4.0 ns tf4 CL = 30pF – 3.0 6.0 Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF , f = 30MHz 4 5–5 5 % Output disable delay time2 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not res umed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time2 tPZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 1.5 3.0 ns tr2 CL = 50pF – 4.0 8.0 Output fall time tf1 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 1.5 3.0 ns tf2 CL = 50pF – 4.0 8.0 Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 50pF , f = 30MHz 4 0–6 0 % Output disable delay time2 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not res umed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time2 tPZL – – 100 ns

SEIKO NPC CORPORATION —18 5010EA× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V , VSS = 0V , Ta = −10 to +70°C unless otherwise noted. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time t r1 Measurement cct 6, load cct 1, CL = 15pF , 0.1VDD to 0.9VDD – 8 16 ns Output fall time t f1 Measurement cct 6, load cct 1, CL = 15pF , 0.9VDD to 0.1VDD – 8 16 ns Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF , f = 30MHz 4 0–6 0 % Output disable delay time2 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not res umed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time2 tPZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 5 10 ns tr2 CL = 50pF – 13 26 Output fall time tf1 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 5 10 ns tf2 CL = 50pF – 13 26 Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF f = 30MHz 45 – 55 Duty2 f = 40MHz 40 – 60 Output disable delay time2 2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not res umed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time2 tPZL – – 100 ns

SEIKO NPC CORPORATION —19 5010FN× series 3V operation/Duty level: CMOS VDD = 2.7 to 3.6V , VSS = 0V , Ta = −10 to +70°C unless otherwise noted. 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V , VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time t r1 Measurement cct 6, load cct 1, CL = 15pF , 0.1VDD to 0.9VDD – 3.0 6.0 ns Output fall time t f1 Measurement cct 6, load cct 1, CL = 15pF , 0.9VDD to 0.1VDD – 3.0 6.0 ns Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF , f = 40MHz 4 0–6 0 % Output disable delay time t PLZ Measurement cct 7, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time t PZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 1.5 3.0 ns tr2 CL = 50pF – 3.0 6.0 Output fall time tf1 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 1.5 3.0 ns tf2 CL = 50pF – 3.0 6.0 Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C CL = 50pF f = 50MHz 4 5–5 5 CL = 15pF f = 70MHz 4 0–6 0 Output disable delay time t PLZ Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time t PZL – – 100 ns

SEIKO NPC CORPORATION —20 5010FH× series 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V , VSS = 0V 30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted. 5010HN× series 5V operation/Duty level: CMOS VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 4 8 ns tr2 CL = 50pF – 11 21 Output fall time tf1 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 4 8 ns tf2 CL = 50pF – 11 21 Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF f = 50MHz 45 – 55 f = 60MHz 40 – 60 Output disable delay time t PLZ Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time t PZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 6, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 1.5 3.0 ns tr2 CL = 50pF – 3.0 6.0 Output fall time tf1 Measurement cct 6, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 1.5 3.0 ns tf2 CL = 50pF – 3.0 6.0 Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 50pF , f = 50MHz 4 5–5 5 % Output disable delay time t PLZ Measurement cct 7, load cct 1, VDD = 5.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time t PZL – – 100 ns

SEIKO NPC CORPORATION —21 5010HK× series 5V operation/Duty level: TTL VDD = 4.5 to 5.5V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Current consumption and Output waveform with NPC’s standard crystal Parameter Symbol Condition Rating Unit min typ max Output rise time tr3 Measurement cct 6, load cct 2, 0.4V to 2.4V CL = 15pF – 1.2 2.4 ns tr5 CL = 50pF – 2.0 5.0 Output fall time tf3 Measurement cct 6, load cct 2, 2.4V to 0.4V CL = 15pF – 1.2 2.4 ns tf5 CL = 50pF – 2.0 5.0 Output duty cycle1 1. The duty cycle characteristic is checked the sample chips of each production lot. Duty Measurement cct 6, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF , f = 50MHz 4 5–5 5 % Output disable delay time t PLZ Measurement cct 7, load cct 2, VDD = 5.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time t PZL – – 100 ns f [MHz] R [ Ω] L [mH] Ca [fF] Cb [pF] 30 17.2 4.36 6.46 2.26 40 16.8 2.90 5.47 2.08 L Ca R Cb f [MHz] R [ Ω] L [mH] Ca [fF] Cb [pF] 30 18.62 16.24 1.733 5.337 40 20.53 11.34 1.396 3.989 50 22.17 7.40 1.370 4.105 60 15.37 3.83 1.836 5.191 70 25.42 4.18 1.254 5.170 for Fundamental oscillator for 3rd overtone oscillator

SEIKO NPC CORPORATION —22 MEASUREMENT CIRCUITS 2.0VP−P , 10MHz sine wave input signal (3V operation) 3.5VP−P , 10MHz sine wave input signal (5V operation) C1 : 0.001 µF R1 : 50 Ω R2 : 5010AN ×, BN×, DN×, AK×, BK× 3V operation: 263Ω 5V operation: 245Ω 5010FN×, HN×, HK× 3V operation: 275Ω 5V operation: 245Ω 5010CL× 3V operation: 275Ω 5V operation: 250Ω 5010EA×, AH×, BH× 3V operation: 1050Ω 5010EA×, AH×, BH×, FH× 5V operation: 975Ω Measurement cct 1 Measurement cct 2 Measurement cct 3 2.0VP−P , 30MHz sine wave input signal (3V operation) 3.5VP−P , 30MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω Signal Generator VDD VSS XT Q R1 R2 VOH Q output VDD VSS Q IZ, IOL VOLV A IZ INHN Signal Generator VDD VSS XT Q IDDA Measurement cct 4 Measurement cct 5 Measurement cct 6 Crystal oscillation CG, CD: 22pF (5010DN×) Rfo: 3.0kΩ (5010H××) Measurement cct 7 R1 : 50Ω VDD VSS IPRA INHN V VIH VIL VDD IPR (VIL = 0V) RUP2 = IPR (VIH = 0.7VDD)VDD VIH RUP1 = VDD VSS IRf Rf = XT VDD IRf XTN A VDD VSS XT QX'tal XTN INHN ISTA Rfo CG CD Signal Generator VSS XT Q VDD INHN

SEIKO NPC CORPORATION —23 Load cct 1 Load cct 2 Switching Time Measurement Waveform Output duty level (CMOS) Output duty level (TTL) Output duty cycle (CMOS) Output duty cycle (TTL) CL = 15pF : DUTY , IDD , tr1 , tf1 CL = 30pF : tr4 , tf4 CL = 50pF : tr2 , tf2 Q output CL (Including probe capacitance) CL = 15pF : DUTY , IDD , tr3 , tf3 CL = 50pF : tr5 , tf5 R = 400Ω Q output (Including probe capacitance) R CL 0.9VDD 0.1VDD 0.9VDD 0.1VDD tr tf Q output DUTY measurement voltage (0.5VDD) TW 2.4V 0.4V 2.4V 0.4V tr tf Q output DUTY measurement voltage (1.4V) TW DUTY measurement voltage (0.5VDD)Q output TW T DUTY= TW/ T 100 (%) DUTY measurement voltage (1.4V) Q output TW T DUTY= TW/ T 100 (%)

SEIKO NPC CORPORATION —24 Output Enable/Disable Delay Note (CL×/EA× series only): when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay. Q output INHN VIH VIL tPLZ tPZL INHN input waveform tr = tf 10ns

SEIKO NPC CORPORATION —25 NC0015DE 2006.04 Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful inﬂuence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the speciﬁcations of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further te sting or modiﬁcation. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any ent ity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are req uested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: sales @npc.co.jp

Product Information

CF5010HK1-1 specifications and overview.

Summary

Crystal Oscillator Module ICs

Description

Crystal Oscillator Module ICs

Source title CF5010HK1-1 Datasheet(PDF) - Nippon Precision Circuits Inc

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