CEDF640 CET | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
© 200V , 18A , Ros(onj=180MQ2 @Ves=10V. D Super high dense cell design for extremely low Rosion). High power and current handling capability. 70-251 & TO-252 package. ¢ 2° oN 0g CEU SERIES CED SERIES TO-252AA(D-PAK) TO-251 (PAK) iS) ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Drain Current-Continuous poo {| oe [a | Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25°C Ww Derate above 25°C wicc Operating and Storage Temperature Range
2 THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) [Parmar |Symb—conton in| tan it esSusdesinig [we [ Vocal [ TV) ES) ° | sey ss [veer [| lo sataseniig [wan [ waa [PTTL een ffm || le saat | wa [cw fe | Foe | te [ weaneeta [sr | [5 coe fete fos] at" CTetate Talal wan [a [om card mam Tos [ Tisfo le aaa o fa | store Lo SEC 6-73
28 TTT oS 23 wa LOL | | |
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
8 SS SS SS SSS SESS SS
33 Pi eer a
Figure 13. Normalized Thermal Transient Impedance Curve