CEDF630 CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
@ 200V , 9A, Ros(onj=400mQ2 + @Vas=10V. D Super high dense cell design for extremely low Rosion). | 6 | High power and current handling capability. e T0-251 & TO-252 package. ¢ 2 oO “§ CEU SERIES CED SERIES TO-252AA(D-PAK) T0-251(|-PAK) Ss ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) (renner | mis [teu Drain Current-Continuous Pe | se [a | Drain-Source Diode Forward Current fs [| 9 | a | Maximum Power Dissipation @Tc=25°C | so | w | Derate above 25°C Operating and Storage Temperature Range
2 THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Te=25°C unless otherwise noted) (mr [en [uo] nS ige [Bis | varorocia [em] [LV FE cco vtetarcien —P ts [ sero vseo| [| [| etiohietae [ts | vomcaniew | [foe] siTnnt ing [van | Wowvarmeona [2] [o [0 = Senne cesieocnGnet | oa | onion fw | | [a fowstasonicae | ts | wweioune [31 | 18 | see fe nam Hee - Vos = 25V, Ves= OV Tels be wean | [a [wn ces sei [_[w fof] SG feacsrtye | o fe [a fe sina | rte 6-68
a.Pulse Test:Pulse Width <300 ws, Duty Cycle < 2%. Figure 1. Output Characteristics Figure 2. Transfer Characteristics
3 S 115
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation
8 A 2 SSS
Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
5 Vy, e Bra ae
Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
25 BOP BREECH Ee |
Figure 13. Normalized Thermal Transient Impedance Curve