CED61A2 CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CED61A2/CEU61A2
FEATURES
20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 0.38 140 ±12 V W A A V W/ C 6 - 94 S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D PRELIMINARY RDS(ON) = 24mΩ @VGS = 2.5V. Lead free product is acquired. 2004.November http://www.cetsemi.com Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 2.6RθJC RθJA
Electrical Characteristics T c = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forwand Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.5 1.2 -100 100 m Ω V nA nA µA V S 6 - 95 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 18A VDS = 10V, ID = 18A VDD = 10V, ID = 18A, VGS = 5V, RGEN = 3.3 Ω VDS = 20V, ID = 18A, VGS = 5V VDS = 20V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 45A 1390 555 175 110 19.5 8.7 1.3 pF pF pF ns ns ns ns nC nC nC A V m Ω VGS = 2.5V, ID = 9A 17 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
Figure 6. Body Diode Forward Voltage