CEU6060R CET | Alldatasheet
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Technical content
N-Channel Logic Level Enhancement Mode Field Effect Transistor Feb. 2003
FEATURES
60V , 30A , RDS(ON) =25m @V GS =10V. Super high dense cell design for extremely low RDS(ON) . High power and current handling capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS Ȁ20 V Drain Current-Continuous @TJ=125 C -Pulsed ID 30 A IDM 120 A Drain-Source Diode Forward Current IS 30 A Maximum Power Dissipation PD W Operating and StorageTemperature Range TJ,TSTG -55 to 175 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R įJC R įJA /WC /WC Ω CED6060R/CEU6060R @Tc=25 C Derate above 25 C
0.3 W/ C
S G D CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) G G S S D D 6-42 Ć
ELECTRICAL CHARACTERISTICS (T C =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS =VGS 0V, ID 250µA= 60 V Zero Gate Voltage Drain Current IDSS VDS 60V, VGS 0V== 25 µA Gate-Body Leakage IGSS VGS 20V, VDS =0 V= 100 nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS VGS ,ID = 250µA= 24 V Drain-Source On-State Resistance R DS(ON) VGS = 10V, ID =2 4 A 25 m Ω On-State Drain Current ID(ON) VGS = 10V, VDS =1 0 V 60 A SForward Transconductance FSg VDS = 10V, ID =2 4 A SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD =3 0 V , ID = 30A, VGS =1 0 V , R GEN = 7.5Ω 15 20 ns ns ns ns 250 300 45 60 130 150 Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =48V, ID =3 0 A , VGS =10V 36 43 nC nC nC Fall Time DRAIN-SOURCE AVALANCHE RATING a Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current EAS IAS VDD 25V,= L2 5 µH= 200 30 A mJ 6-43 R G 25= Ω ĆĆ
b.Guaranteed by design, not subject to production testing. Figure 1. Output Characteristics Figure 2. Transfer Characteristics