CED3055L3 CET | Alldatasheet
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Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES fe | D © 30V ,3.7A, Ros(onj=80MQ @Ves=10V. Rosonj=110mMQ @Vcs=4.5V. © Super high dense cell design for extremely low Ros(on). e High power and current handing capability. # 10-251 &T0-252 Package. G CEU SERIES CED SERIES TO-252AA(D-PAK) ‘TO-251(|-PAK) ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Drain Current-Continuous* @Ts=125°C } o | 7 [| oa | Drain-Source Diode Forward Current * a Operating Junction and Storage 1, Tst¢ -55 to 150 ae) Temperature Range , THERMAL CHARACTERISTICS 6-17
ELECTRICAL CHARACTERISTICS (Tc-25°C unless otherwise noted) [nee] cin [ua oa | 6 | OFF CHARACTERISTICS Drain-Source Breakdown Voltage Ves=0V, ID=250uA lo] | [vl Zero Gate Voltage Drain Current Vos =24V, Ves=0V mle Gate-Body Leakage Vos =#20V, Vos=0V | | [100] na | ON CHARACTERISTICS? Gate Threshold Voltage Vos=Ves, ln = 250A Drain-Source On-State Resistance Rosion) Nes=i0y ln=22A | fa [oo | ves=45v,0=104 | [a0 | 110 | mal On-State Drain Current Vos= 10V, Ves= 10V le] | [al Forward Transconductance Vos = 10V, lb=3.7A ls fe] [s| DYNAMIC CHARACTERISTICS Input Capacitance | | 29 | 00 | |
5 Vs =10V, Ves = OV
Output Capacitance f=1,0MHz | | 120 | 160 | oF | Reverse Transfer Capacitance | | ae | a5 | oF | SWITCHING CHARACTERISTICS" Turn-On Delay Time Voo = 10V, | | 5 | 20 [1s | Veen = 10V, Turn-Off Delay Time Roen= 62 || a0 | 0 | ns | Total Gate Chage | | || 7 [9 [0c | Vos =10V, lo = 3.7A, [3 | | nc | Gate-Source Charge ra Ves =10V || 3 | | nC Gate-Drain Charge | ou _| | [3] [ac 6-18
2 MNS o& A
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
3 B a | |
Figure 13. Normalized Thermal Transient Impedance Curve