CED3055L CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
© 60V , 8A, Rosionj=150mQ @Ves=10V. D Rosonj=180MQ2 @Ves=5V. © Super high dense cell design for extremely low Ros(on). e High power and current handling capability. © 70-251 & TO-252 package. ¢ 2° oN 0g CEU SERIES CED SERIES TO-252AA(D-PAK) TO-251(|-PAK) Ss ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Drain Current-Continuous Pe foe | a Drain-Source Diode Forward Current | s | 8 | a | Maximum Power Dissipation @Tc=25°C Derate above 26°C Operating and Storage Temperature Range -65 to 175 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Rau 62.5 6-12
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) ante enti ys Datorabeionibag [ams [| Tete [| [TO PssGasdartone | os [mais | | 171] faa carbene [ss | vseanivseot | [ao | catenin | eee [1 [ST poo [fee tte Pisemoem >| otf esata [oor | vecsuveee [oe] | [a Fowattawnacms | ts | wertuea | [a | [8 eae - Vos = 25V, Ves= OV feces fe Rt" Talat Ta ole ests | | het] ardarcae | oy | tet ta] 6-13
a.Pulse Test:Pulse Width <300 us, Duty Cycle < 2%. b.Guaranteed by design, not subject to production testing.
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Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve