CEU02N6 CET | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON) =5 @V GS =10V. Super high dense cell design for extremely low RDS(ON) . High power and current handling capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS 30 V -Pulsed ID 1.9 A IDM A Drain-Source Diode Forward Current IS 6 A Maximum Power Dissipation PD W Operating and Storage Temperautre RangeTJ,TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R įJC R įJA 2.9 /WC /WC Ω @Tc=25 C Derate above 25 C
0.34 W/ C
Drain Current-Continuous (Tc=25 C) S G D 6-77 Dec. 2002 CED02N6/CEU02N6 Ć CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) G G S S D D -Continuous (Tc=100 C) ID 1.2 A
ELECTRICAL CHARACTERISTICS (T C =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING a OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS = 0V,ID = 250µA 600 V Zero Gate Voltage Drain Current IDSS VDS =6 0 0 V ,VGS =0 V 25 µA Gate-Body Leakage IGSS VGS =3 0 V , VDS =0 V 100 nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS =V GS ,ID = 250µA 24 V Drain-Source On-State Resistance R DS(ON) VGS =10V, ID =1 A 5.0 Ω On-State Drain Current ID(ON) VGS = 10V, VDS =1 0 V 1.2 A SForward Transconductance FSg VDS = 50V, ID =1 A SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD = 300V, ID =2 A , VGS =1 0 V R GEN =18 18 35 ns ns ns ns 18 35 50 90 16 40 Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =480V, ID = 2A, VGS =10V 20 25 nC nC nC Fall Time 6-78 Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current EAS IAS VDD =50V, L=60mH A mJ Ω CED02N6/CEU02N6 R G =9.1Ω 125 3.8 ĆĆ
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms Figure 13. Normalized Thermal Transient Impedance Curve Figure 9. Gate Charge Figure 10. Maximum Safe