CED01N6 CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CED01N6/CEU01N6
FEATURES
650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 650 0.25 3.6 0.9 ±30 V W A A V W/ C CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D Lead free product is acquired. Rev 1. 2005.Decemcer http://www.cetsemi.com G D S Single Pulsed Avalanche Energy d Avalanche Current EAS IAS 0.8 A mJ Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 4RθJC RθJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2 4 -10 V µA µA µA V Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 650 VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.4A VDD = 300V, ID = 0.4A, VGS = 10V, RGEN = 4.7Ω VDS = 480V, ID = 0.8A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 0.8A 136 1.0 4.4 0.8 1.6 pF pF pF ns ns ns ns nC nC nC A V Ω Forward Transconductance SgFS b VDS = 20V, ID = 0.4A 0.5 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 190mH, IAS = 0.8A, VDD = 50V, RG = 25Ω , Starting TJ = 25 C .