CET9435A CET | Alldatasheet
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P-Channel Enhancement Mode MOSFET | 8 | FEATURES © -30V , -5.3A , Rosony=60MQ + @Ves=-10V. D Rosionj=120MQ @Ves=-4.5V. Super high dense cell design for extremely low Rosion). High power and current handing capability. Surface Mount Package. G ff are,” 6 Ss SOT-223 ‘SOT-223 (J23Z) ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Drain Current-Continuous* @Ts=125°C | o | sa | a | -Pulsed” Drain-Source Diode Forward Current * Operating Junction and Storage Ty, Tst¢ 55 to 150 °¢ Temperature Range , THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient* 8-22
ELECTRICAL CHARACTERISTICS (Ta-25°C unless otherwise noted) [Poser [t|—_Cnin [in [tu fe | DaeSonesessomiaege [ores | Voawn=aoa [o] | [v [eoGateVotaeran Gurert__|iss_ | vos=-2auivessev ||| +1 | | Gaede | tw | Yesenivss || [tl ob [caeTwestodvotge | Ves | VoseVesb=-250a [1 | | 3 | v | ee See lonstaDnincuret | tocw | os=-aiivess-iov_ | ol | | a | Fora Tarsowduiane | rs] osetsvib=-8a4 | ¢ [ea] | s | - Vos =-15V, Ves = 0V feces fos] Ma” alate | [| ico] | Vo= 18 | fs | | os | cd Pesi= 6 [| 15 | 10 | os | [| 40 | 10 | os | foal Gatechage | BE esednniewe | | he) 8-23
23 PAN =8 |
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation
2 J | s
Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
3 LL VE || = OTIS SR SEH
5 IVE an Snr gives
Figure 9. Gate Charge Figure 10. Maximum Safe
08 FROST
2 Boos 0s ee th
Figure 13. Normalized Thermal Transient Impedance Curve