CET453N CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
© 30V , 8A, Rosionj=28mQ + @Ves=10V. D Rosion)=42mQ @Ves=4.5V. © High dense cell design for low Rosion). Rugged and reliable. af el D G G Ss SOT-223 SOT-223 (J23Z) ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Drain Current-Continuous* @Ts=125°C } o | # | a | Drain-Source Diode Forward Current * a Operating Junction and Storage Tu, Tsr6 65 to 150 °C Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient * 8-17
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) | Paraneter [Symbol] Conon in | yp a | Dasoeteaon oie [ois [| Votan [a] | [v| Becaev ances | ws | vocarvem —| | [1 [an | oaednyedage | ts | voseorvsoy |_| [aon | «| See EN EC poms oof ate | voseesvinsa7a || 3 | a2 [ma | JonsiteDrainCurent | too | Vossevvesstov 5s | | [a | FomardTrnsoonduoarce | es | Vosstsyi-ea =o fe | [8 | [aw [way | - Vos = 15V, Ves=0V feces fos] fe CTateta Pf fo | Won=26, || | [os | re fats MEIEIC [saeDain rage | | | [3] [rc] 8-18
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
4 Tas25°C Sire
Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms js |
25 ERR Se wy" j
Figure 13. Normalized Thermal Transient Impedance Curve