CET3904E CENTRAL | Alldatasheet

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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 6.0 V Collector Current I C 200 mA Power Dissipation (Note 1) P D 250 mW Power Dissipation (Note 2) P D 430 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance (Note 1) ΘJA 500 °C/W Thermal Resistance (Note 2) ΘJA 290 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN PNP SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS ICEV VCE=30V, VEB=3.0V 50 nA BVCBO IC=10μA 60 115 90 V BVCEO IC=1.0mA 40 60 55 V BVEBO IE=10μA 6.0 7.5 7.9 V VCE(SAT) IC=10mA, IB=1.0mA 0.057 0.050 0.100 V CET3904E NPN CET3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS SOT-883L CASE Central Semiconductor Corp. TM R1 (5-MAY 2008) DESCRIPTION: The Central Semiconductor CET3904E / CET3906E Low V CE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in a Tiny Leadless Package TLP™, these components provide performance characteristics suitable for the most demanding size constrained applications. Enhanced specification MARKING CODES: CET3904E: C CET3906E: D Notes: (1) FR-4 epoxy PC board, standard mounting conditions (2) FR-4 epoxy PC board with collector mounting pad area of 1 cm 2 Bottom ViewTop View FEATURES:

  • Device is Halogen Free by design
  • Power Dissipation 250mW
  • Low VCE(SAT) 0.1V Typ @ 50mA
  • Small, TLP™ 1x0.4mm, SOT-883L Leadless, Low Profile, Surface Mount Package APPLICATIONS:
  • DC / DC Converters
  • Battery powered devices including Cell Phones and Digital Cameras

SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS VCE(SAT)I C=50mA, IB=5.0mA 0.100 0.100 0.200 V VBE(SAT) IC=50mA, IB=5.0mA 0.85 0.85 0.95 V hFE VCE=1.0V, IC=0.1mA 90 240 130 hFE VCE=1.0V, IC=1.0mA 100 235 150 hFE VCE=1.0V, IC=10mA 100 215 150 300 hFE VCE=1.0V, IC=50mA 70 110 120 hFE VCE=1.0V, IC=100mA 30 50 55 fT VCE=20V, IC=10mA, f=100MHz 300 MHz Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 pF Cib VBE=0.5V, IC=0, f=1.0MHz 8.0 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 1.0 12 k Ω hre VCE=10V, IC=1.0mA, f=1.0kHz 0.1 10 X10 -4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 100 400 hoe VCE=10V, IC=1.0mA, f=1.0kHz 1.0 60 μS NF V CE=5.0V, IC=100μA, RS =1.0KΩ, 4.0 dB f=10Hz to 15.7kHz td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 200 ns tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 50 ns Central Semiconductor Corp. TM R1 (5-MAY 2008) SOT-883L - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR ELECTRICAL CHARACTERISTICS - Continued: CET3904E NPN CET3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS Enhanced specification♦