CET3252 CET | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 8A, RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM ±20 V W A A V S G D SOT-223 G D D S CET3252 Lead free product is acquired. http://www.cetsemi.com PRELIMINARY This is preliminary information on a new product in development now . Details are subject to change without notice . Rev 1. 2006.Nov Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W42RqJA

Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 3226 1.0 3.0 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 8A VGS = 4.5V, ID = 6.4A VDD = 15V, ID = 5A, VGS = 10V, RGEN = 3W VDS = 15V, ID = 5A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 2.3A 615 150 100 12.5 1.7 2.7 16.6 1.2 4536 mW pF pF pF ns ns ns ns nC nC nC A V CET3252 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.