CET3055 CET | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor FEATURES D © 60V,, 4A, Rosionj=100mMQ2 @Ves=10V. High dense cell design for low Ros(on). Rugged and reliable. © SOT-223 Package. G D G G Ss ‘SOT-223 SOT-223 (J23Z) ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) [renner mi [tt [um a Drain Current-Continuous* @Ty=125°C jo» [| « [a | Drain-Source Diode Forward Current * Operating Junction and Storage Ty. Tste 65 to 150 °C Temperature Range , THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient* 8-2
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) DanSonebsseimiige | Bhs | Vo-Olo-ama [a | [v| [ero GateVotage rain Curent | oss | Vos=aayvos-ov | || 10 | a | oaesrteage | sw | Vsenivne | | (nto | | 8 | oe ee lorsiteDran Curent | toon | Voss touves=tv os | | | a | FomardTrnsonducarce | es | Voss ttisinea [a [4 | Is | fete fos] Rt" totale - Vos = 25V, Ves= OV MmESENa Von= 281 | 7 |e | os | pis Tw To Roni =500 | [a [5 | os | [alot [TualGeteChage | | [9 [a [rc | eseonniee | | et pe) 8-3
23 FSRRR R= Ee =e ere
Figure 13. Normalized Thermal Transient Impedance Curve