CER6080

CER6080 CET | Alldatasheet

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http://www.cetsemi.com Rev 1. 2006.Sep Details are subject to change without notice . Dual Enhancement Mode Field Effect Transistor (N and P Channel) D1 D1 D2 D2 S1 G1 S2 G2 1 2 3 4 8 7 6 5 60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. Lead free product is acquired. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.5 5.6 ±20 V W A A V P-Channel -60 -15 -3.3 ±20 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W50RθJA

Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 1 3 -100 100 m Ω V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 5.6A VDS = 15V, ID = 5.6A VDD = 30V, ID = 4.4A, VGS = 10V, RGEN = 1 Ω VDS = 30V, ID = 5.6A, VGS = 10V VDS = 30V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1.3A 750 105 3.0 4.5 5.6 1.2 pF pF pF ns ns ns ns nC nC nC A V m Ω VGS = 4.5V, ID = 4.4A 60 N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.

Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 130 -1 -3 -100 100 m Ω V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -60 VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -3.3A VDS = -15V, ID = -3.3A VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6 Ω VDS = -30V, ID = -3.3A, VGS = -10V VDS = -30V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.3A 890 10.7 2.1 1.1 -3.3 -1.2 pF pF pF ns ns ns ns nC nC nC A V 105 180 m Ω VGS = -4.5V, ID = -2.6A 135 P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.