CEP840A CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS PD IDM e 500 150 ±30 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP840A CEF840A 500V 500V 0.85W 0.85W 8.5A 8.5A d 10V 10V 0.3 34 d 6 d CEB840A 500V 8.5A 10V TO-220/263 TO-220F PRELIMINARY http://www.cetsemi.com This is preliminary information on a new product in development now . Details are subject to change without notice . Rev 1. 2011.Nov 0.85W Drain Current-Continuous ID A @ TC = 100 C @ TC = 25 C 8.5 8.5 d Lead-free plating ; RoHS compliant. Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS IAS mJ A 196 7.5 Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1RqJC RqJA 3.1
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.850.68 2 4 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD g Typ Max 500 VDS =500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 4.3A VDD = 250V, ID =7A, VGS = 10V, RGEN = 9.1W VDS = 400V,ID = 7A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 7A 1580 125 33.3 1.5 pF pF pF ns ns ns ns nC nC nC A V CEP840A/CEB840A CEF840A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) =4.8A . g.Full package VSD test condition IS =4.8A . h.L = 7mH, IAS =7.5A, VDD = 50V, RG = 25W, Starting TJ = 25 C