CEP83A3 CET | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
N-Channel Enhancement Mode Field Effect Transistor CEP83A3/CEB83A3
FEATURES
30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 0.67 100 400 100 ±20 V W A A V W/ C 4 - 178 S G D G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 RDS(ON) = 8.0mΩ @VGS = 4.5V. Lead free product is acquired. Rev 1. 2005.August http://www.cetsemi.com Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS IAS 35 875 A mJ Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.5RθJC RθJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 8.0 1 3 -100 100 mΩ V nA nA µA V S 4 - 179 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 40A VDS = 10V, ID = 15A VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω VDS = 15V, ID = 16A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 20A 9500 800 300 25.7 128 200 20.8 1.5 pF pF pF ns ns ns ns nC nC nC A V VGS = 10V, ID = 50A 5.3 mΩ 6.0 4.2 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω , Starting TJ = 25 C