CEP8030L CET | Alldatasheet
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Technical content
| a | N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
© 30V, 75A,, Roscon=6mQ @Ves=10V. D Rosionj=9mQ @Ves=4.5V. Super high dense cell design for extremely low Rosion). High power and current handling capability. e 70-220 & TO-263 package. G D \\ (°) > GY CEB SERIES CEP SERIES iS) TO-263(DD-PAK) 70-220 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25°C Ww Derate above 25°C wi°c Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 62.5 “CW 4-142
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a Pulse Test:Pulse Width <300 «s, Duty Cycle < 2%.
240 Se ae
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation
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Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
0 Te=25'C ==ae53 eae
05 CEA
Figure 9. Gate Charge Figure 10. Maximum Safe