CEP10N6 CET | Alldatasheet
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Technical content
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 10A , RDS(ON)=1 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS V -Pulsed ID A IDM A Drain-Source Diode Forward Current IS A Maximum Power Dissipation PD W Operating and Storage Temperautre Range TJ, TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 0.8 62.5 C C Ω @Tc=25 C Derate above 25 C 156 1.25 W/ C Drain Current-Continuous S G D 4-172 PRELIMINARY CEP10N6/CEB10N6 Ć TO-263(DD-PAK) TO-220 CEB SERIES CEP SERIES G S S D D G
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING a OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = 250µA 600 V Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V 100 µA Gate-Body Leakage IGSS VGS = 30V, VDS = 0V 100 nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA V Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 5A 1.0 Ω On-State Drain Current ID(ON) VGS = 10V, VDS = 10V A S Forward Transconductance FS g VDS = 40V, ID = 5A SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD =300V, ID = 10A, VGS = 10V RGEN=25 ns ns ns ns 170 170 255 120 180 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS =480V, ID = 10A, VGS =10V nC nC nC Fall Time 4-173 Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current EAS IAS VDD =50V, L=11.8mH A mJ Ω CEP10N6/CEB10N6 RG=25Ω 500 0.75 Ć Ć