CEP1012 CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Transistor ja |
FEATURES
© 120V , 10A,, Roson=120M2._~s @Ves=10V D Super high dense cell design for extremely low Rosion). High power and current handling capability. T0-220 & TO-263 package. G 0 "0 > vs Gg OF CEB SERIES CEP SERIES Ss TO-263(DD-PAK) 70-220 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Drain Current-Continuous Pe foo Ta Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25°C W Derate above 25°C | 08 | wie Operating and Storage Temperature Range -65 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RaJa 62.5 4-7
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Drs [a] catin [ou arswatucsniag [ae | Veaiomaa To [1 [ero GateVotage Dain Curent_—_| oss | Vossiaov,ves=ov ||| 25 | a | sede Ds [vical | Lal Psst [tn] wmaen || | lonsiteDranCurent_————| tow | Vos=tovivos=tv [10 | | | a | [FomardTenscondutance es | Mosetovn=5a || 8] Is | CIE feces fos] at” Talat Von = 2 || 2 [a | os | Cs [Toa GateChage | |_| 2 [a | 1 | tarOuge | os | tet Te) 4-8 | |
a Pulse TestPulse Width <300 ys, Duty Cycle < 2%. ° Vos, brain-to-Source Voltage 1) . ‘ Vos, Gate to-Source Votiage wy). Figure 1. Output Characteristics Figure 2. Transfer Characteristics
38 K| 23 A
58 LET TTT NY z8 on
0.92 C085
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
3 Vos=96V /| FER
Figure 9. Gate Charge Figure 10. Maximum Safe