CEP05P03 CET | Alldatasheet
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Technical content
Single P-Channel Enhancement Mode MOSFET
FEATURES
e -30V , -4.9A , Rosiony=70MQ @Ves=-10V D Ros(onj=120MQ + @Ves=-4.5V © Super high dense cell design for extremely low Ros(on). High power and current handling capability. T0-220 package for through hole. G CEP SERIES 1020 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Drain Gurrent-Continuous @TJ=125C | o | «9 | a | Drain-Source Diode Forward Current ee Operating Junction and Storage Ti, Tste 55 to 150 % Temperature Range THERMAL CHARACTERISTICS 4-2
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) oO [erento contin [1 [taunt OFF CHARACTERISTICS. Drain-Source Breakdown Voltage Ves= OV, ln=-250uA Jala] fv] Zero Gate Voltage Drain Current Vos=-30V, Ves=0V | | [a [wl Gate-Body Leakage Ves=20V, Vos=0V | | | too] ma | ON CHARACTERISTICS’ Gate Threshold Voltage Vos=Ves, l= -250uA | 1 [+6] 3 [v | Ves 48h Drain-Source On-State Resistance Ros(on) B= 10¥, be 8 | fm Vos=45v,o=208 | | 100 | 20 | ma| On-State Drain Current Vos=-5V, Ves=-10V lol | [al Forward Transconductance Vos=-15V, lo=-4.9A fs] | fs] DYNAMIC CHARACTERISTICS? Input Capacitance |_| 840 [1200 | | , Vos=-15V, Ves=0V Output Capacitance f=1.0MH2 | | 420 | 600 | af | Reverse Transfer Capacitance | | 140 | 200 | oF | SWITCHING CHARACTERISTICS’ Turn-On Delay Time Von = -15V, | [a | 15 [ns | Fise Time meer | [it | | os | Turn-Off Delay Time Reen = 62 | |e [a [os | Total Gate Charge lo | | | 6 | a | nc | Gate-Source Charge ra Ves =-10V || 5 | | nc Gate-Drain Charge | ou_| | fe] [nc]
2 PTET] efoto t TT TT |
38 I~ 28 1 |
0.4 S085
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe