CEP04N6 CET | Alldatasheet
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Technical content
Sena. >= PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor |
FEATURES
COO , AA Roin= 2.50 e¥s=10¥. D Super high dense cell design for extrenely lov Risa. High pover and current handling capebil ity. © 10-220 & 10-263 package. é CEB SERIES au SIRIES s To 26s(0D-FA) re) ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Drain Current-Continuous — @T)=125'C foo [oa fia | Maxinun Power Dissipation eTc=25 C, Pp ee Derate above 25°C Operat ing and Storageleaperature Range THERMAL CHARACTERISTICS [a mists atovtwo | We ne | [its tina [ton | @ [on _|
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Cr al — ium nae [+ Te Tl Ta Ea a Avalanche Current OFF CHARACTERISTICS Drain-Source Breaklown Voltage oe ii Pewter | ws | eo] [= Tee a ON CHARACTERISTICS* [aetehidbie [ew | eae | TO rain-Source On-State Resistance on | woacven | |e fas Q State Iain Current Lo | ts=to w= fal [fa | Forvard Transconduct ance [as | ww-m ba | fas] [s | SWITCHING CHARACTERISTICS? Turn-n Delay Tine Von = 2200, | [a [9 [os | Bis Ti ae BouG os = 10 Tar Ott Delay Tire his20 | [as [19 | os | Fall Tine | [| | [os | Tal (ate large alo | [ziale | Gate-Source Charge Qs Me ~ nea | [aol [a | Gate-Drain Charge Qui | fest fe |
aPulse Test: Pube Width 300 us, Duty Cycle <2. b.Guaranteed by design, not subject to production testing. Figure 1. Output Characteristics Figure 2. Transfer Characteristics