CEP02N6_02 CET | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM f 600 0.48 ±30 V W A A V W/ C 4 - 2 S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP02N6 CEF02N6 600V 600V 2A e 10V 10V TO-220/263/262 TO-220F 0.23 6 e 2 e CEP02N6/CEB02N6 CEI02N6/CEF02N6 CEB02N6 600V 5Ω 2A 10V Lead free product is acquired. 2002.September http://www.cetsemi.com S D G CEI SERIES TO-262(I2-PAK) CEI02N6 600V 5Ω 2A 10V Operating and Store Temperature Range Single Pulsed Avalanche Energy d Repetitive Avalanche Current a Repetitive Avalanche Energy a EAS TJ,Tstg EAR IAR -55 to 150 5.4 125 A mJ C mJ Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 2.1RθJC RθJA 5.4 125 4.3
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 5.03.8 2 4 -100 100 Ω V nA nA µA V S 4 - 3 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD Typ Max 600 VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 1A VDS = 50V, ID = 1A VDD = 300V, ID = 2A, VGS = 10V, RGEN = 18Ω VDS = 480V, ID = 2A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 2A h 250 1.5 1.2 pF pF pF ns ns ns ns nC nC nC A V CEP02N6/CEB02N6 CEI02N6/CEF02N6 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =60mH, IAS =2.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 1.5A . h.Full package VSD test condition IS = 1.5A .