CEP01N6 CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM f 650 0.29 ±30 V W A A V W/ C G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP01N6 CEF01N6 650V 650V 15Ω 15Ω 1A e 10V 10V TO-220/263/262 TO-220F 0.22 4 e 1 e CEP01N6/CEB01N6 CEI01N6/CEF01N6 CEB01N6 650V 15Ω 1A 10V Lead free product is acquired. Rev 1. 2005.December http://www.cetsemi.com S D G CEI SERIES TO-262(I2-PAK) CEI01N6 650V 15Ω 1A 10V G D S Operating and Store Temperature Range Single Pulsed Avalanche Energy d Repetitive Avalanche Current EAS TJ,Tstg IAS -55 to 150 0.8 A mJ C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 3.5RθJC RθJA 4.5
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2 4 -10 V µA µA µA V Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 650 VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.4A VDD = 300V, ID = 0.4A, VGS = 10V, RGEN = 4.7Ω VDS = 480V, ID = 0.8A, VGS = 10V VGS = 0V, IS = 0.8A 136 1.0 4.4 0.8 1.6 pF pF pF ns ns ns ns nC nC nC A V Ω Forwand Transconductance SgFS b VDS = 20V, ID = 0.4A 0.5 CEP01N6/CEB01N6 CEI01N6/CEF01N6 VDS = 25V, VGS = 0V f = 1.0MHz Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L = 190mH, IAS = 0.8A, VDD = 50V, RG = 25Ω , Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area .