CEM9435A CET | Alldatasheet
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P-Channel Enhancement Mode MOSFET FEATURES | | © -30V , -5.3A, Rosonj=50mMQ +@Ves=-10V. Ros(on=90MQ @Ves=-4.5V. Super high dense cell design for extremely low Ros(on). L [J] High power and current handing capability. (4) ¢ Surface Mount Package. ey BQ [TI SO-8 Ss S$ S G ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Dram Curen-Coninus eres | © [| 88 |_| Pulsed” | om [| 2 [ a | Drain-Source Diode Forward Current * Operating Junction and Storage Ty, Ts1a 55 to 150 °¢ Temperature Range , THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient* 5-137
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) FER orouncrnses i ose Beaom ilps [Bias [ Vestvb-ema a] [v| TaoGae otgedanGuet | os | vs-2nive-w | |) aha | eset tetas | ss | viseonvos-or | | [etal oa | coeThestodvoige [Von | vataneane [1] 2 [v | pecmocunean [pen ees oS Pssasreae [|e | [mo lrsaedancomn [om | vsraive-w [ot | [a Faded | | vs=ann-sa [+] [s | [et [ia] | ; Vos =-15V, Ves=0V feceee fee] a” Caleta PT Fo fo | wn (2 1®[ 6] ce rast = [|_| [ef | ee Ff Fron [os | fuaiceeoap | a | Ff [a [oo | eaeoencnsye | ow | Te feo] 5-138
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe
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Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve