CEM9400A CET | Alldatasheet
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P-Channel Enhancement Mode Field Effect Transistor FEATURES is | e -30V , -3.4A,, Ros(ony=130MQ @Ves=-10V. . : D DODO © Super high dense cell design for extremely low Ros(on). [al [al e High power and current handing capability. Surface Mount Package. ety \\ Kr | LT s0-8 ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) renee sis [tm um Drain Current-Continuous* @Tu=125°C | » | ss | a | Drain-Source Diode Forward Current * tuinnrowoseen | we | as | w_| Operating Junction and Storage Ty, Tse -55 to 150 ae) Temperature Range , THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient * 5-87
ELECTRICAL CHARACTERISTICS (TA-25°C unless otherwise noted) ee ee) |» | ec fnrsombeiiine [ois | watowema [aT [Tr focitiortan [es | wear | [aa ino [os |i [fal arti [on | tatoo [1 [Ta pees [ef nen] | (ae Pvsaauteess | [To pesaandast [om | westisen [ol [Ta fomsimeoonm | os | westoxsa | [eT Ts, mCIiea - Vos =-10V, Ves = 0V fete fee] ea” Caleta MEE Ay, — fete te moet — [fw fa[o fatale] asset [folate] iron | os mE 5-88
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
25 SS ¥
Figure 13. Normalized Thermal Transient Impedance Curve