CEM9400 CET | Alldatasheet
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Technical content
P-Channel Enhancement Mode Field Effect Transistor | | FEATURES © -20V , -2.5A , Roson=250mQ + @Ves=-10V. Rosion)=400MQ @Ves=-4.5V. DDoDoD © Super high dense cell design for extremely low Rosion). iel_7l 18 High power and current handing capability. (a e Surface Mount Package. ay BH Koo | So-8 Ss S S G ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Drain Current-Continuous* @Ts=125°C | o | 2 | oa | Drain-Source Diode Forward Current * Fiuinroetsiaor | | as |W _| Operating Junction and Storage Ty, Tst¢ 55 to 150 °¢ Temperature Range , THERMAL CHARACTERISTICS 5-92
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) ree [ta] ein no] le | Persowsaesetts [ais [ amon Tay [Tv] Pte tarcret [os | weiinew [ [ [afi] sesainee os | veaantis | | Lol] cetevie [Won [ nena [OT [a Tv] penmoaanene [no acer [T fale Pvscesuncast | | [afm smebatne [oo | westen [o lf [| Fostewwams | te | weisie-2a | [el [s| Tafale] - Vos =-10V, Ves =0V feces fos] (ea CTelete Te Tole] a er CD mn = | [fafa fame | Te faa] Twice | | Tots fo] seduce | or Erte] 5-93
a Surface Mounted on FR4 Board, t <10sec. b.Pulse Test:Pulse Width <300 1s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
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Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Figure 4. On-Resistance Variation with
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Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve