CEM8433 CET | Alldatasheet
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P-Channel Enhancement Mode Field Effect Transistor FEATURES | | @ -20V , -5.2A , Rosion=55mQ @Ves=-4.5V. Ros(ony=95MQ @Ves=-2.5V. Super high dense cell design for extremely low Rosion). a | High power and current handing capability. (4) Surface Mount Package. ey { {| Q so-8 S$ S S G ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) [rams sis [tm [um Drain Current-Continuous* @Ts=125°C | o [| #2 | a | Drain-Source Diode Forward Current * Fron rowosimin [me [as | Operating Junction and Storage Tu, Tst6 55 to 150 °C Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient * 5-57
| | CEM8433 ELECTRICAL CHARACTERISTICS (Ta-25'C unless otherwise noted) | Pantry] Contin [in a nit EM srtieiceasns perSusteamiip [abs [ varmmoana [aT Tv twp | ws [vent | [Tafa seine ts [ raat | [fal emenstiee [in [ otannema [ofa [7 eee Pvsezsieen | [ors | manera [mo [ venatvscasr [wwf [La Fomstscoe | te [ vewiuneem | [oT Ts mee” - Vos=-10V, Ves=0V fate fos] Mea" CTatta [eof a CED meat [Too] fof [a ious | | “fale fel sieostie [or Erte 5-58 | |
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Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve