CEM8410 CET | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor is | FEATURES © 30V , 10A,, Roscony=15mMQ @Ves=10V. Rosion)=20mMQ @Ves=4.5V. DDODoOD Super high dense cell design for extremely low Ros(on). gl Tt e High power and current handing capability. (o>) Surface mount Package. ced HR oe Li] SO-8 Ss S S$ G ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) [rameters [teu Drain Current-Continuous* @Ty=125°C |» | wo | a | -Pulsed” Drain-Source Diode Forward Current * Operating Junction and Storage T, Ts1G -55 to 150 °¢ Temperature Range , THERMAL CHARACTERISTICS 5-52
| | CEM8410 ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) eee ei) roumcrnsnes Parsonemeoning [aba [ wesmeamme [a [TT eden [ts [vse [TT Ta ieomin [ts [ toss [ [fal enesite [van [ warm [Tis [3 T momen eens t tte Cwsatieat | [nfo [am saad [wo [ wos [af [To fatto [ts [ imemeesem | [@ [Ts mes - Vos=15V, Ves=0V feces fee] at” (Teleta ENCE fafa fe fsondae | a BGG [socie [0 ECs 5-53 | |
a.Surface Mounted on FR4 Board, t <10sec. b.Pulse Test:Pulse Width <300 vs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Figure 1. Output Characteristics Figure 2. Transfer Characteristics
28 Ps 22 A
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
3 LILY < EPS EH
8 Jat Re, Ee
Figure 9. Gate Charge Figure 10. Maximum Safe