CEM8401 ETC1 | Alldatasheet
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Technical content
Dual Enhancement Mode Field Effect Transistor ( N and P Channel) Feb. 2003
FEATURES
30V , 7.5A , RDS(ON) =21m @V GS =10V. Super high dense cell design for extremely low RDS(ON) . High power and current handing capability. Surface Mount Package. ABSOLUTE MAXIMUM RATINGS (T A =25 C unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS V Drain Current-Continuous -Pulsed ID 2.0 A A A W IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R įJA 62.5 /WC Ω R DS(ON) =30m @V GS =4.5V.Ω -30V , -5.0A , RDS(ON) =50m @V GS =-10V.Ω R DS(ON) =75m @V GS =-4.5V.Ω CEM8401 a a a a 7.5 2.3 -30 5.0 -2.3 1234 8765 S1 G 1 S2 G 2 D 1 D 1 D 2 D 2 SO-8 5-190 ĆĆ Ć Ć Ć Ć
N-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS =0 V ,ID = 250µA 30 V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS =0 V 1 µA Gate-Body Leakage IGSS VGS =2 0 V , VDS =0 V 100 nA ON CHARACTERISTICS b Gate Threshold Voltage VGS(th) VDS =V GS ,ID = 250µA 13 V Drain-Source On-State Resistance R DS(ON) VGS = 10V, ID =9 A 18 21 m Ω VGS = 4.5V, ID = 7.4A 25 30 m Ω On-State Drain Current ID(ON) VDS =5 V ,VGS = 10V 15 A SForward Transconductance FSg VDS = 15V, ID =9 A DYNAMIC CHARACTERISTICS c Input Capacitance C ISS C RSS C OSSOutput Capacitance Reverse Transfer Capacitance VDS =25V, VGS =0 V f =1.0MHZ 857 PF 343 PF PF105 SWITCHING CHARACTERISTICS c Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD =1 5 V , ID = 3.5A, VGS =1 0 V , R GEN =6 22 45 ns ns ns ns 34 70 43 90 18 35 Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =15V, ID = 4.7A, VGS =10V 28 35 nC nC nC 7.5 C Fall Time Ω 5-191 Ć Ć
P-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS =0 V ,ID =2 5 0µA -30 V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS =0 V -1 µA Gate-Body Leakage IGSS VGS = 20V, V DS =0 V 100 nA ON CHARACTERISTICS b Gate Threshold Voltage VGS(th) VDS =V GS ,ID = -250µA -1 -3 V Drain-Source On-State Resistance R DS(ON) VGS = -10V, ID = -4.2A 40 50 m Ω VGS = -4.5V, ID = -3.4A 65 75 m Ω On-State Drain Current ID(ON) VDS = -5V, VGS = -10V -15 A SForward Transconductance FSg VDS = -15V, ID = -4.2A DYNAMIC CHARACTERISTICS c Input Capacitance C ISS C RSS C OSSOutput Capacitance Reverse Transfer Capacitance VDS =-15V, VGS =0 V f =1.0MHZ 1124 PF 488 PF PF150 SWITCHING CHARACTERISTICS c Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD = -15V, ID = -4.2A, VGEN = -10V, R GEN =6 21 40 ns ns ns ns 23 45 33 65 60 100 Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =-15V, ID = -4.2A, VGS =-10V 30 36 nC nC nC 7.5 C Fall Time Ω 5-192 ĆĆ