CEM8206 CET | Alldatasheet
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Technical content
Dual N-Channel Enhancement Mode Field Effect Transistor Feb. 2003
FEATURES
20V , 6A , RDS(ON)=20m @V GS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. ABSOLUTE MAXIMUM RATINGS (T A =25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS 12 V Drain Current-Continuous -Pulsed ID 6 A A A W IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,T STG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient RįJA 62.5 /WC Ω RDS(ON)=30m @V GS=2.5V.Ω CEM8206 a a a a 1234 8765 S1 G 1 S2 G 2 D 1 D 1 D 2 D 2 SO-8 5-73 Ć Ć Ć
ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS =0 V ,ID =2 5 0µA 20 V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS =0 V 1 µA Gate-Body Leakage IGSS VGS = 12V, VDS =0 V 100 ON CHARACTERISTICS b Gate Threshold Voltage VGS(th) VDS =V GS ,ID = 250µA 0.5 1.5 V Drain-Source On-State Resistance R DS(ON) VGS =4 . 5 V ,ID =6 . 0 A 17 20 m Ω VGS = 2.5V, ID = 5.2A 23 30 m Ω On-State Drain Current ID(ON) VDS =5 V ,VGS = 4.5V 10 167 A SForward Transconductance FSg VDS =10V, ID =6 . 0 A DYNAMIC CHARACTERISTICS c Input Capacitance C ISS C RSS C OSSOutput Capacitance Reverse Transfer Capacitance VDS =8V, VGS =0 V f =1.0MHZ 950 PF 450 PF PF135 SWITCHING CHARACTERISTICS c Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD =1 0 V , ID =1 A , VGS = 4.5V, R GEN =6 Ω 20 40 ns ns ns ns 20 40 72 130 20 40 Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =10V, ID = 6A, VGS =4.5V 15 20 nC nC nC 3.4 1.2 C Fall Time 5-74 Ć Ć nA