CEM6659 CET | Alldatasheet
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Technical content
This is preliminary information on a new product in development now . Details are subject to change without notice . 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.0 4.1 ±20 V W A A V SO-8 P-Channel -60 -12 -3.1 ±20 CEM6659 http://www.cetsemi.com Rev 1. 2006.May RDS(ON) = 86mΩ @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. PRELIMINARY D1 D1 D2 D2 S1 G1 S2 G2 1 2 3 4 8 7 6 5 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RθJA
Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 6856 1 3 100 mΩ V µA µA µA V S On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 4.1A VGS = 4.5V, ID = 3.5A VDS = 10V, ID = 4.1A VDD = 30V, ID = 1A, VGS = 10V, RGEN = 6Ω VDS = 30V, ID = 4.1A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 2A 670 1.7 2.6 4.1 1.2 8666 mΩ pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. N-Channel Electrical Characteristics TA = 25 C unless otherwise noted -100 CEM6659 Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse
Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 130100 -1 -3 -100 100 mΩ V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -60 VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -3.1A VGS = -4.5V, ID = -2.8A VDS = -10V, ID = -3.1A VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω VDS = -30V, ID = -3.1A, VGS = -10V VDS = -30V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.3A 885 2.4 1.6 -3.1 -1.2 170130 mΩ pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. P-Channel Electrical Characteristics TA = 25 C unless otherwise noted