CEM4953 CET | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Dual P-Channel Enhancement Mode MOSFET FEATURES | | © -30V , -4.9A,, RDS(ON)=53mQ @Vas=-10V. bt pt pe pe -3.6A , RDS(ON)=95MQ @VGs=-4.5V. al Gl Super high dense cell design for extremely low RDS(ON). LI L_ High power and current handing capability. (| Surface Mount Package. ay ey ~ i] so-8 S1 G1 s2 G2 ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted) Drain Current-Continuous* @Ts=125°C | » | «9 [| oa | Drain-Source Diode Forward Current * Operating Junction and Storage Tu, Tst6 55 to 150 °¢ Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient* 5-37
| | CEM4953 ELECTRICAL CHARACTERISTICS (TA-25°C unless otherwise noted) [Parameter ——_—_[syot]__ conn [ain ya [un | on DacSoneteasomiaege [ores | Voawn=aoa [w] | (v [eoGateVotaeran Gurert__|tss_| vos=-anivessev | [| +1 | | oaeanyige | ts | vseenivss | | [to] poems [ef aes fates lonstaDnincuret | tocw | vos=-airvess-iov_ | ol | | a | Fora Tarsonduiane | rs | oseetsvib=-40n | s [0] | s | - Vos =-15V, Ves= OV feces fee] Ma” CTeleta | [0 | sso | | Wo= 18 | fe | 5 | os | versio, |_| 23 | ao [ os | reve Te [so foal Gatechage | |_| 16 | 25 | oc | esednniew | | et pe) 5-38 | |
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
3 Z26nnna & EEE RSS
Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
0 Esa eS
Figure 13. Normalized Thermal Transient Impedance Curve