CEM4435 CET | Alldatasheet
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P-Channel Enhancement Mode Field Effect Transistor FEATURES | 5 | e -30V , 8A, Rosionj=20mQ2 @Ves=-10V. -5A,, Rosonj=35mQ — @Ves=-4.5V. Super high dense cell design for extremely low Ros(on). [Ly] Ty High power and current handing capability. (4) Surface mount Package. ey a Q 4] mS $s S S G ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) [reamed mis [tm Drain Current-Continuous* @Ts=125°C } » | # | a | Drain-Source Diode Forward Current * [tminnrowoseen | we | as | w_| Operating Junction and Storage Ty, Tsr6 55 to 150 °C Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient * 5-27
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) [—_araetr symbol] conto in yp a unit is | OFF CHARACTERISTICS Drain-Source Breakdown Voltage Ves=0V, 0 =-250uA }-o] | fv Zero Gate Voltage Drain Current Vos=-30V, Ves=0V | ff a faa | Gate-Body Leakage Vos =+20V, Vos=0V | | too] na | ON CHARACTERISTICS? Gate Threshold Voltage Vos=Vos, lp = -250uA Ves=-10V, b= -8A Drain-Source On-State Resistance Ros(on) aeoilh, De | | ve=4aip-8h | |_| 35 | no) On-State Drain Current Vos=-5V, Ves= -10V fo} | fal Forward Transconductance Vos=-15V, lo =-8A | fo] fs | DYNAMIC CHARACTERISTICS” Input Capacitance | | 2152 - Vos =-15V, Ves = 0V Output Capacitance §=1.0MHz |_| 1029 | 1400] oF | Reverse Transfer Capacitance |_| 270 | 350 | oF | SWITCHING CHARACTERISTICS” Turn-On Delay Time Vpn = -15V, | | 14 [a0 | ns | Rise Ti je Time tf ety | | 9 | 2 | 1s Tum-Of Delay Time Rae = 60 |_| a0 | 120 | as | Fl Tine Asia || a | | os | Total Gate Charge | oo | | | 4 |e | ac | Gate-Source Charge ie “iN D=46A, | fol acl Gate-Drain Charge | Ou_| | fa] fac] 5-28
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
3 Y| = aes oe ee ae
Figure 9. Gate Charge Figure 10. Maximum Safe
8 Wo 50% 50%
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms Figure 13. Normalized Thermal Transient Impedance Curve