CEM4431 CET | Alldatasheet
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P-Channel Enhancement Mode Field Effect Transistor oo FEATURES © -30V , -5.8A , Rosiony=40mQ ~~ @Vas=-10V. Rosion=70MQ @Ves=-4.5V. DB DD D Super high dense cell design for extremely low Rosion). fel [7 18 High power and current handing capability. (a Surface mount Package. ay — I _ | so-8 Ss S$ S G ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted) DranCurentConinwis' eras |_® | 88 |_| winrar | | as |W Operating Junction and Storage Ty. Ta -55 to 150 ae) Temperature Range , THERMAL CHARACTERISTICS 5-22
ELECTRICAL CHARACTERISTICS (Ta-25°C unless otherwise noted) Smt] Conon [tot] OFF CHARACTERISTICS | 5 | Drain-Source Breakdown Voltage Ves=0V, ID=-250uA fof | fv] Zero Gate Voltage Drain Current Vos=-30V, Ves=0V | ff tua | Gate-Body Leakage Ves =+20V, Vos=0V | | fst0o] na | ON CHARACTERISTICS" Gate Threshold Voltage Vos=Ves, lp = -250uA rs [0 |e Drain-Source On-State Resistance Ros(on) Nes=10¥ b= $8 || % On-State Drain Current Vos=-5V, Ves= -10V fo] | fal Forward Transconductance Vos =-15V, Ip =-5.3A fas] | fs | DYNAMIC CHARACTERISTICS’ Input Capacitance |_| 1540 2000 - Vos =-15V, Ves=0V Output Capacitance f=1.0MHz |_| 620 | a0 | oF | Reverse Transfer Capacitance | | s10 | 400 | oF | SWITCHING CHARACTERISTICS” Turn-On Delay Time Vo = -15V, | | 10 | 20 | 1s | fave | rifa te Fise Time men | | it | 20 | ns Turn-Off Delay Time Roen= 62 | | 5 | 55 | os | Total Gate Charge | Oo | | | 2 | a5 [nc | Vos =-15V, lo =-5.3A, a | nc | Gate-Source Charge | Os | Vos =-10V | | 4 | | nC Gate-Drain Charge | Os | | fa] fac | 5-23
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28 NS 29 |
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation
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Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe