CEM4426 VBSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 9
Technical content
N-Channel 60-V (D-S) MOSFET
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition TrenchFET ® Power MOSFET Optimized for “Low Side” Synchronous Rectifier Operation 100 % Rg and UIS Tested
APPLICATIONS
CCFL Inverter Notes: a. Pa ckage limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady Stat e conditions is 85 °C/W. PRODUCT SUMMARY VDS (V) R DS(on) (Ω) ID (A)d Qg (Typ.) 0.025 at VGS = 10 V 7.6 10.5 nC 0.035 at VGS = 4.5 V 6.5 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit VDrain-Source Voltage DS 60 VVGate-Source Voltage GS ± 20 TC Continuous Drain Current (TJ = 150 °C) = 25 °C 7.6 ID a TC A = 70 °C 6.8 6.1TA = 25 °C b, c 4.8TA = 70 °C b, c IPulsed Drain Current DM 25 TCContinuous Source-Drain Diode Current = 25 °C IS 4.2 2.1TA = 25 °C b, c Avalanche Current I L = 0.1 mH AS 15 ESingle-Pulse Avalanche Energy AS 11.2 mJ TC Maximum Power Dissipation = 25 °C PD TC W = 70 °C 3.2 2.5TA = 25 °C b, c 1.6TA = 70 °C b, c TJ, TOperating Junction and Storage Temperature Range stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter TSymbol ypical Maximum Unit t ≤ Maximum Junction-to-Ambientb, d 10 s RthJA 38 50 °C/WMaximum Junction-to-Foot (Drain) RSteady State thJF 20 25 S S D D DS G D SO-8 Top View D G S N-Channel MOSFET CEM4426-VB g www.VBsemi.com
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VGS = 0 V, IDDrain-Source Breakdown Voltage = 250 µA 60 V VDS Temperature Coefficient ID = 250 µA 55 mV/°C VDS ΔVDS/TJ ΔVGS(th)/TVGS(th) Temperature Coefficient J - 6.3 VDS = VGS, IDVGate-Source Threshold Voltage GS(th) = 250 µA 1.2 2.5 V VDS = 0 V, VGSIGate-Source Leakage GSS = ± 20 V ± 100 nA VDS = 60 V, VGSIZero Gate Voltage Drain Current DSS = 0 V 1 µAVDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta VDS ≥ 5 V, VGS ID(on) = 10 V 25 A Drain-Source On-State Resistancea VGS = 10 V, ID RDS(on) Forward Transconductancea gfs VDS = 15 V, ID = 4.6 A 20 S Dynamicb CisInput Capacitance s VDS = 30 V, VGS = 0 V, f = 1 MHz 1100 C pFOutput Capacitance oss 90 CReverse Transfer Capacitance rss 55 VDS = 30 V, VGS = 10 V, ID QTotal Gate Charge g = 4.6 A 21 32 nC10 VDS = 30 V, VGS = 4.5 V, ID = 4.6 A .5 16 QGate-Source Charge gs 3.5 QGate-Drain Charge gd 4.2 RGate Resistance g f = 1 MHz 3.3 5 Ω tTurn-On Delay Time d(on) VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 t ns Rise Time r 150 225 tTurn-Off DelayTime d(off) 20 30 tFall Time f 60 90 tTur n-On Delay Time d(on) VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 10 15 tRise Time r 15 25 td(Turn-Off DelayTime off) 25 40 tFall Time f 10 15 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I S TC = 25 °C 4.2 APulse Diode Forward Currenta ISM 25 Body Diode Voltage ISVSD = 2 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C 25 50 ns Body Diode Reverse Recovery Charge Q rr 25 50 nC Reverse Recovery Fall Time ta 19 nsReverse Recovery Rise Time tb 6 CEM4426-VB g www.VBsemi.com
25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge ID - Drain Cu VDS - Drain-to-Source Voltage (V) rrent (A) VGS = 3 V VGS = 10 V thru 4 V 0 5 10 15 20 25 RDS(on) - On-Resistance (Ω ID - Drain Current (A) 0.02 0.024 0.032 0.036 0.040 VGS = 4.5 V VGS = 10 V 0 5 10 15 20 25 VGS - Gate-to-Source Voltage (V ID = 4.6 A Qg - Total Gate Charge (nC) VDS = 30 V Tran VDS = 48 V sfer Characteristics Capacitance On-Resistance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) ID = 125 °C ID = 25 °C TC = – 55 °C Crss0 300 600 900 1200 1500 0 102 03 04 05 06 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Ciss 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 RDS(on) TJ - Junction Temperature (°C) - On-Resistance (Normalized) VGS = 10 V, ID = 4.6 A CEM4426-VB g www.VBsemi.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 1.0 1.2 IS - Source Cu 0.4 0.6 0. 8 VSD - Source-to-Drain Voltage (V) rrent (A) TJ = 150 °C TJ = 25 °C 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 25 50 75 100 125 150 VGS(th) (V) ID = 250 µA - 50 - 25 On-Resistance vs. Gate-to-Sou TJ - Temperature (°C) rce Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.02 0.03 0.04 0.05 0.06 0.07 0246 8 10 VGS - Gate-to-Source Voltage (V) RDS(on) - Drain-to-Source On-Resistance (Ω) ID = 4.6 A 125 °C 25 °C Power (W) Time (s) 110 10 10 100 60010-1-2-3 Safe Operating Area 100 0.1 1 10 ID - Drain Cu 100 0.01 rrent (A) 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TA = 25 °C Single Pulse BVDSS Limited Limited by RDS(on)* 1 ms 10 ms 100 ms DC 1 s 10 s 100 µs CEM4426-VB g www.VBsemi.com
25 °C, unless otherwise noted * The power dissipation P D is based on TJ(max) = 150 ° C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Package Limited Power, Junction-to-Foot TC - Case Temperature (°C) Power (W) 25 50 75 100 125 150 CEM4426-VB g www.VBsemi.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-210 10 1 0 0 601-1-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Effectiv Square Wave Pulse Duration (s) e Transient Thermal Impedance 1. Duty Cycle, D = t 2. Per Unit Base = RthJA = 70 3. TJM - TA = PDMZthJA C/W (t) Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-210 10 0 11-1-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Effectiv Square Wave Pulse Duration (s) e Transient Thermal Impedance CEM4426-VB g www.VBsemi.com
A 1.35 1.75 0.053 0.069 0A1 .10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm BA 0.004"L1 A e D SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS 0.25 mm (Gage Plane) -012 S CEM4426-VB g www.VBsemi.com
RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) 0.172 Dimensions in Inches/(mm) (4.369) 0.047 0.152 (3.861)(1.194) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads 0.022 (0.559) Return to Index CEM4426-VB g www.VBsemi.com
All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. CEM4426-VB www.VBsemi.com