CEM4269 CET | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

D u a l E n h a n c e m e n t M o d e F i e l d E f f e c t T r a n s i s t o r ( N a n d P C h a n n e l ) CEM4269

FEATURES

40V, 6.1A, RDS(ON) = 32m Ω @ VG S = 1 0 V . RDS(ON) = 46m Ω @ VG S = 4 . 5 V . Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.0 6.1 ±20 V W V SO-8 D1 D1 D2 D2 S1 G1 S2 G2 8 7 6 5 1 2 3 4 L e a d f r e e p r o d u c t i s a c q u i r e d . Channel 2 -40 ±20 -40V, -5.2A, RDS(ON) = 43m Ω @ VG S = 1 0 V . RDS(ON) = 65m Ω @ VG S = 4 . 5 V . -20 -5.2 A TA=25 C TA=70 C 4.9 -4.2 TA=25 C TA=70 C 1.28 Operating and Store Temperature Range TJ,Tstg -55 to 150 C http://www.cetsemi.com Rev 1. 2006.April Specification and data are subject to change without notice . Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RθJA

N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 1 3 -100 100 m Ω V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VDS = 5V, ID = 6A VDD = 20V, ID = 6A, VGS = 10V, RGEN =3 Ω VDS = 20V, ID = 6A, VGS = 10V VDS = 20V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1.0A 1050 155 20.5 3.5 4.0 1.0 1.0 46 m Ω pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. CEM4269

P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF -1 -3 -100 100 mΩ V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -40 VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -5A VGS = -4.5V, ID = -2A VDS = -5V, ID = -4.8A VDD = -20V, ID = -5A, VGS = -10V, RGEN = 3Ω VDS = -20V, ID = -5A, VGS = -10V VDS = -20V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.0A 1115 205 120 3.3 4.1 -1.0 -1.0 65 mΩ pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.