CEM3138 CET | Alldatasheet

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Dual N-Channel Enhancement Mode Field Effect Transistor CEM3138

FEATURES

30V, 9.1A, RDS(ON) = 15mW @VGS = 10V. RDS(ON) = 21mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.0 36.4 9.1 ±20 V W A A V SO-8 D1 D1 D2 D2 S1 G1 S2 G2 8 7 6 5 1 2 3 4 Lead free product is acquired. http://www.cetsemi.com Channel 2 ±20 30V, 6.9A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 35mW @VGS = 4.5V. 27.6 6.9 Details are subject to change without notice . Rev 2. 2006.Nov Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA

N-Channel(Q1) Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 1512 1 3 -100 100 mW V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 8.6A VGS = 4.5V, ID = 7.5A VDS = 5V, ID = 8.6A VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6W VDS = 15V, ID = 12A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 3A 2110 400 260 19.8 6.4 5.8 26.3 1.2 2117 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.

N-Channel(Q2) Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2620 1 3 -100 100 mW V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6.3A VGS = 4.5V, ID = 5.6A VDS = 5V, ID = 6.3A VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6W VDS = 15V, ID = 12A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1.3A 862 464 146 12.7 3.7 4.1 16.5 1.3 1.2 3527 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.