CEM2539 CET | Alldatasheet

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Details are subject to change without notice . 20V, 7.5A, RDS(ON) = 22mW @VGS = 10V. Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.0 7.5 ±12 V W A A V SO-8 P-Channel -20 -15 -4.0 ±12 CEM2539 http://www.cetsemi.com Rev 3. 2007.Sep. RDS(ON) = 24mW @VGS = 4.5V. -20V, -4.0A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 100mW @VGS = -4.5V. RDS(ON) = 150mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. RDS(ON) = 33mW @VGS = 2.5V. D1 D1 D2 D2 S1 G1 S2 G2 1 2 3 4 8 7 6 5 S1 S2 *1K Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA

Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6W VDS = 10V, ID = 5A, VGS = 4.5V VGS = 0V, IS = 1.5A 1.5 1.2 A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSS IGSS 2217 0.5 1.2 ±10 mW V µA µA µA V S Gate Body Leakage Current On Characteristics c Dynamic Characteristics d Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Typ Max VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 6A VDS = 15V, ID = 6A 15 2420 mW N-Channel Electrical Characteristics TA = 25 C unless otherwise noted VGS = 2.5V, ID = 5A 3325 mW 0.35 0.87 3.60 2.01 0.7 1.8 7.5 4.3 4.3 1.1 2.5 5.7 µs µs µs µs nC nC nC ±10 CEM2539

P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF -0.5 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Typ Max -20 VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -3.5A VGS = -4.5V, ID = -2.8A 100 mW pF pF pF ns ns ns ns nC nC nC A V VGS = -2.5V, ID = -2.0A mW 150 Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VDD = -10V, ID = -4A, VGS = -4.5V, RGEN = 3W VDS = -10V, ID = -4A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.0A 1175 230 130 14.4 72.8 28.8 145.6 10.6 1.5 2.5 14.1 -4.0 -1.0 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. Dynamic Characteristics d Forward Transconductance SgFS VDS = -5V, ID = -3.5A 10