CEM2187 CET | Alldatasheet
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Technical content
http://www.cetsemi.com Rev 2. 2010.OctThis is preliminary information on a new product in development now . Details are subject to change without notice . P-Channel Enhancement Mode Field Effect Transistor CEM2187
FEATURES
-20V, -7.6A, RDS(ON) = 22mW @VGS = -4.5V. RDS(ON) = 32mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -20 2.0 -30 -7.6 ±12 V W A A V SO-8 Lead free product is acquired. D1 D1 D2 D2 S1 G1 S2 G2 8 7 6 5 1 2 3 4 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF -0.4 -1.3 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -20 VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = -250µA VGS = -4.5V, ID = -7.6A VGS = -2.5V, ID = -6A VDD = -6V, ID = -1A, VGS = -4.5V, RGEN = 6W VDS = -6V, ID = -7.6A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -2.5A 2805 505 395 178 31.5 3.8 8.8 -7.6 -1.2 32 mW pF pF pF ns ns ns ns nC nC nC A V Forward Transconductance SgFS VDS = -9V, ID = -7.6A 32 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.