CEM11C2 CET | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
FEATURES
30V ,7A , RDS(ON) =30m @V GS =10V. Super high dense cell design for extremely low RDS(ON) . High power and current handing capability. Surface Mount Package. ABSOLUTE MAXIMUM RATINGS (T A =25 C unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS V Drain Current-Continuous @TJ=125 C -Pulsed ID 2.0 A A A W IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R įJA 62.5 /WC Ω R DS(ON) =42m @V GS =4.5V.Ω -20V , -4.3A , RDS(ON) =90m @V GS =-4.5V.Ω R DS(ON) =120m @V GS =-2.5V.Ω CEM11C2 a a a a b 2.3 -20 4.3 -4.3 1234 8765 S1 G 1 S2 G 2 D 1 D 1 D 2 D 2 SO-8 Jul. 2002 Ć Ć Ć Ć Ć Ć 5-148
N-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS = 0V,ID= 250µA 30 V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V 1 µA Gate-Body Leakage IGSS VGS = 20V, VDS = 0V 100 nA ON CHARACTERISTICS b Gate Threshold Voltage VGS(th) VDS = VGS ,ID = 250µA 13 V Drain-Source On-State Resistance R DS(ON) VGS = 10V, ID = 7A 24 30 m Ω VGS = 4.5V, ID = 3.5A 32 42 m Ω On-State Drain Current ID(ON) VDS = 5V, VGS = 10V 30 A SForward Transconductance FSg VDS = 15V, ID =7A DYNAMIC CHARACTERISTICS c Input Capacitance C ISS C RSS C OSSOutput Capacitance Reverse Transfer Capacitance VDS =15V, VGS =0 V f =1.0MHZ 804 PF 328 PF PF79 SWITCHING CHARACTERISTICS c Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD =2 5 V , ID =1 A , VGS =1 0 V , R GEN =6 16 24 ns ns ns ns 7 14 47 60 10 15 Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =15V, ID = 2A, VGS =10V 20 24 nC nC nC C Fall Time Ω Ć 5-149 Ć
P-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID= -250µA -20 V Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 µA Gate-Body Leakage IGSS VGS = 8V, VDS = 0V 100 nA ON CHARACTERISTICS b Gate Threshold Voltage VGS(th) VDS = VGS ,ID = -250µA -0.6 V Drain-Source On-State Resistance R DS(ON) VGS = -4.5V,ID = -2.2A 50 90 m Ω VGS = -2.5V,ID = -1.8A 80 120 m Ω On-State Drain Current ID(ON) VDS = -5V, VGS = -4.5V -20 A SForward Transconductance FSg VDS = -16V,ID = -2.2A DYNAMIC CHARACTERISTICS c Input Capacitance C ISS C RSS C OSSOutput Capacitance Reverse Transfer Capacitance VDS =-15V, VGS =0 V f =1.0MHZ 1430 PF 800 PF PF325 SWITCHING CHARACTERISTICS c Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD =1 0 V , ID = -2.2A, VGEN = - 4.5V, R GEN =6 20 28 ns ns ns ns 21 30 76 106 56 78 Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =-6V, ID = -2.2A, VGS =-4.5V 19.4 25 nC nC nC C Fall Time Ω -1.5 Ć 5-150 Ć