CEK7000 CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
© 60V ,0.2A, Rosonj=5Q2 @Ves=10V. D Rosionj=5.32 @Ves=4.5V. © High dense cell design for low Rosion). e Rugged and reliable. ¢ T0-92 Package. 70-92 G oo s je | ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Pansoeawee | we | @ |v Drain Current-Continuous* @Ts=125°C | o | am | m | -Pulsed” | tow | so | lm Fwimnrowospsen |e] wm | Operating Junction and Storage Ty, Tst¢ -55 to 150 6 Temperature Range , THERMAL CHARACTERISTICS 9-7
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) Smal] [ta ot] OFF CHARACTERISTICS Drain-Source Breakdown Voltage Ves= OV, lo=10uA lo] | fv] Zero Gate Voltage Drain Current Vos=48V, Ves=0V Y | [a [a] Gate-Body Leakage Ves=+15V, Vos=0V | | [sto [m | ON CHARACTERISTICS? Gate Threshold Voltage Vos=Ves, lo= 1mA Jos] [3fvl | vessvoaom | | [sla Drain-Source On-State Resistance Ros(on) vose4sv,i-7ima | | [sa | a | On-Siate Drain Curent vosst0v,vossav | 75] | [ml Forward Transconductance Vos=10V, lo=200mA [0 [ | [ns | DYNAMIC CHARACTERISTICS” Input Capacitance | [ols |e | - Vos = 25V, Ves= 0V Output Capacitance f=1,0MHz | | 20 | 2 | oF | Reverse Transfer Capacitance | false SWITCHING CHARACTERISTICS” Tum-On Delay Time Vo =15V, | [a | 10 | 1s | Non LLL a | os | Veen = 10V, Tum-Of Delay Time Ree-250 | [7 [10 | os | | fs [a [os | 9-8
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe
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Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve