CEPF630B CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM f 200 0.59 ±30 V W A A V W/ C 4 - 194 S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEPF630B CEIF630B 200V 200V 0.4Ω 0.4Ω 10V 10V 0.28 36 e 9 e CEBF630B 200V 0.4Ω 9A 10V Lead free product is acquired. 2004.November http://www.cetsemi.com PRELIMINARY CEFF630B 200V 0.4Ω 9A e 10V S D G CEI SERIES TO-262(I2-PAK) TO-220/263/262 TO-220F CEPF630B/CEBF630B CEIF630B/CEFF630B Operating and Store Temperature Range Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS TJ,Tstg IAS -55 to 150 150 A mJ C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.7RθJC RθJA 150 3.6
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forwand Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.40.34 2 4 -100 100 Ω V nA nA µA V S 4 - 195 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD Typ Max 200 VDS = 200V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 4.5A VDS = 40V, ID = 4.5A VDD = 100V, ID = 9A, VGS = 10V, RGEN = 25Ω VDS = 160V, ID = 9A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 9A 550 100 150 130 140 1.5 pF pF pF ns ns ns ns nC nC nC A V CEPF630B/CEBF630B CEIF630B/CEFF630B Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L = 3mH, IAS = 9A, VDD = 50V, RG = 25Ω , Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 6A .