CEH2313-HF COMCHIP | Alldatasheet

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  • Case : TSOP-6, molded plastic. - Epoxy : UL 94V-0 rated flame retardant. - Lead Pure tin plated. : Circuit Diagram G(3) D(1,2,5,6) S(4) Notes: 1. Surface mounted on 1 in² copper pad of FR-4 board. 156°C/W when mounted on minimum copper pad. 2. Pulse width limited by maximum junction temperature. 3. Pulse width ≤300µs, Duty cycle ≤ 2%. Absolute Maximum Ratings (at Ta=25°C unless otherwise noted) Drain-source voltage Gate-source voltage Total power dissipation @ TA=25°C Operating junction temperature range Storage temperature range Unit SymbolParameter VDS VGS ID PD RθJA TJ TSTG Value -30 ±20 -5.2 1.6 -55 to +150 -55 to +150 V V A W °C/W IDM -30 A Thermal resistance, Junction to ambient (Note 1) Pulsed (Note 2,3) Drain current ID -4.2 A Drain current-continuous @ VGS=-4.5V, TA=25°C (Note 1) Drain current-continuous @ TA=70°C VGS=-4.5V, (Note 1) Linear derating factor 0.013 W/°C RθJC 25Thermal resistance, Junction to case - Simple drive requirement. - Low on-resistance. - Small package outline. Dimensions in inches and (millimeter) TSOP-6 0.122(3.10) 0.106(2.70) 0.070(1.80) 0.055(1.40) 0.075(1.90) REF. 0.039(1.00) 0.027(0.70) 0.020(0.50) 0.011(0.30) 0.118(3.00) 0.102(2.60) 0.005(0.12) REF. REF. Max. 0.037(0.95) REF. 0.043(1.10) Max. Page 1 REV:C QW-JTR29 1 2 3 6 5 4

SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = -250µA Zero gate voltage drain current VDS = VGS, ID = -250µA VDS = -24V, VGS = 0V ID = -5A, VGS = -10V BVDSS IDSS * RDS(on) -2.5 -30 V mΩ Dynamic ID = -3.7A, VGS = -4.5V 75 Typ Static Electrical Characteristics (at Ta=25°C unless otherwise noted) -1Gate- threshold voltagesource VGS(th) Gate-source leakage VGS = ±20V, VDS = 0V IGSS ±100 nA Drain-source on-state resistance µA Diode forward voltage Continuous source-drain diode current * VSD * IS -2 Source-Drain Diode A V-1.2IS = -1.7A, VGS = 0V VDS = -24V, VGS = 0V, Tj = 55°CIDSS -10 µA Recovered charge * Qrr Reverse recovery time * trr nS nC *Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. -1.6 Total gate charge Gate-drain charge Gate- charge source * Qg * Qgs 4.9 nCVDS = -24V, VGS = -5VID = -5A, 2.6 * Qgd Reverse transfer capacitance Input capacitance Coss Crss VDS = -15V, VGS = 0V, f = 1MHZ ciss 829 Output capacitance 85 pF IS = -1.7A , VGS = 0V dlF/dt = 100A/µs Reference to 25°C, ID = -1mA∆BVDSS/∆TJ -0.02 V/°CTemperature coefficient of breakdown voltage V 85ID = -3A, VGS = -4V * RDS(on) mΩ ID = -1.5A, VGS = -3V 150 Drain-source on-state resistance 116 Forward transconductance VDS = -5V, ID = -4A 6.2 S VDS = -10V, ID = -1.75A gFS 3.3 Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time * td(on) * tr * td(off) * tf nS VDS = -15V, ID = -1A VGS = -10V, RG = 6Ω Pulse diode forward current * ISM -8 -0.77 MOSFET Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. Page 2 REV:C QW-JTR29

Rating and Characteristic Curves (CEH2313-HF) MOSFET Drain Current, -ID (A) 0.01 100 1000 100.1 Fig.2 - Static Drain-Source On-State Resistance VS Drain Current Static Drain-Source On-State Resistance, RDS(ON) ( mΩ ) 100 0 84 12 20 Total Gate Charage, Qg (nC) Gate-Source Voltage, -VGS (V) Fig.6 - Gate Charge Characteristics Capacitance , CJ (pF) Drain-Source Voltage, -VDS (V) Fig.4 - Capacitance VS Drain-Source Voltage 1000 10000 100 0.1 10 100 VGS=-3V VGS=-4V Gate-Source Voltage, -VGS (V) 2 4 6 8 200 Fig.3 - Static Drain-Source On-State Resistance VS Gate-Source Voltage Static Drain-Source On-State Resistance, RDS(ON) (mΩ) ID=-5A 0.01 0.1 10 Drain Current, -ID (A) Forward Transfer Admittance, GFS (S) 0.01 Fig.5 - Forward Transfer Admittance vs Drain Current 0.1 VDS=-10V VDS=-5V Pulsed Ta=25°C VGS=-10V VGS=-4.5V 100 120 140 160 180 Crss Coss Ciss VDS=-24V VDS=-15V VDS=-5V Drain Current, -ID (A) Fig.1 - Typical Output Characteristics Drain-Source Voltage, -VDS (V) 0 1 2 3 4 5 -VGS=4V -VGS=3V -VGS=10V, 9V, 8V, 7V, 6V -VGS=5V 0.001 ID=-5A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. Page 3 REV:C QW-JTR29

Gate-Source Voltage, -VGS (V) 0 2 4 6 Drain Current, -ID (A) Fig.7 - Typical Transfer Characteristics VDS=10V Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. Page 4 REV:C QW-JTR29 Rating and Characteristic Curves (CEH2313-HF)

Reel Taping Specification d F E B P1 P0 P A W T C MOSFET B C d D D2D1 TSOP-6 SYMBOL (mm) (inch) SYMBOL (mm) E F P P0 P1 W 1.75 0.10± 0.069 0.004± 3.50 0.10± 0.138 0.004± TSOP-6 3.17 ± 0.10 0.125 0.004± 3.10 0.10± 0.122 0.004± 1.10 0.10± 0.043 0.004± A 60.00 ± 0.50 2.362 ± 0.020 13.00 0.20± 0.512 0.008± 1.50 + 0.10 - 0.00 180.00 + 0.00 - 3.00 8.00 + 0.30 - 0.10 0.315 0.012+ - 0.004 0.059 + 0.001 - 0.00 7.087 + 0.00 - 0.118 12.30 + 1.00 - 0.30 0.484 + 0.039 - 0.012 T 0.25 ± 0.03 0.010 ± 0.001 D1 D2 D Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. Page 5 REV:C QW-JTR29 120°

3,000 REEL ( pcs ) REEL PACK Reel Size (inch) 7TSOP-6 Suggested P.C.B. PAD Layout A B C D E SIZE E B C D A (mm)

1.00 Min

0.70 Min

0.95 Min

2.40 Min

3.40 Min

(inch)

0.039 Min

0.028 Min

0.037Min 0.094Min

0.134 Min

XXXX = Control code Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. Page 6 REV:C QW-JTR29