CEH2305 CET | Alldatasheet
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P-Channel Enhancement Mode Field Effect Transistor CEH2305
FEATURES
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -30 2.0 -20 -4.9 ±12 V W A A V S(4) G(3) D(1,2,5,6,) TSOP-6 PRELIMINARY http://www.cetsemi.com Rev 1. 2006.AugThis is preliminary information on a new product in development now . Details are subject to change without notice . -30V, -4.9A , RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 119mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead free product is acquired. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RθJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 5242 -0.7 -1.3 -100 100 mΩ V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -2.2A VGS = -2.5V, ID = -1.2A VDS = -10V, ID = -4.9A VDD = -15V, ID= -4.9A, VGS = -10V, RGEN = 6Ω VDS = -15V, ID = -4.9A, VGS = -4.5V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1A 910 160 210 8.5 2.5 1.6 -4.9 119 mΩ mΩ pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.