CEG6946 CET | Alldatasheet
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Technical content
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
© 20V , 2.8A,, Roson)=80.0M2 @Ves=4.5V. Rosoon=110.0MQ2 @Ves=2.5V. De Se S2 Ge Super high dense cell design for extremely low Rosion). —_— High power and current handing capability. , e TSSOP-8 for Surface Mount Package. G OJ +: Di Si Si G (TOP VIEW) ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Drain Current-Continuous* @Ts=125°C } » | 2 | a | Drain-Source Diode Forward Current * Operating Junction and Storage Ty, Tst¢ -55 to 150 6 Temperature Range , THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient* 9-17
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Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation
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Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage Figure 9. Gate Charge Figure 10. Maximum Safe
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Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve