CEFF630 CET | Alldatasheet

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Technical content

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

© 200V, 10A,, Rosion=400m2 @Ves=10V D © Super high dense cell design for extremely low Rosion). | | High power and current handling capability. e T0-220F full-pak for through hole. G % A s

8 TO-220F

ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Drain Current-Continuous Pe | oo Ta -Pulsed | ow [ ow [| a | Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25°C 35 Ww Derate above 25°C Operating and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RaJA 65 6-77

ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Sal] oon [on ta [oa OFF CHARACTERISTICS Drain-Source Breakdown Voltage Ves = OV, lo= 250uA | 200] 20] |v | 6 | Zero Gate Voltage Drain Current Vos = 200V, Ves= OV | | fs faa | Gate-Body Leakage Ves = +20V, Vos= 0V | | [ston | na | ON CHARACTERISTICS? Gate Threshold Voltage Vos= Ves, ln = 250A fe | fad Drain-Source On-State Resistance Ves= 10V, b= 3.5A | | n} 0a On-State Drain Current Ves= 10V, Vos= 10V ho] | fal Forward Transconductance Vos= 10V, ln= 3.54 ha] | fs DYNAMIC CHARACTERISTICS’ Input Capacitance | | 650 | soo | oF | - Vos = 25V, Ves= OV Output Capacitance f=1.0MH2 | | 110 | 250 | oF | Reverse Transfer Capacitance | | | a5 | oF | SWITCHING CHARACTERISTICS” Turn-On Delay Time Von = 100V, | | fe | ns | Rise Time tr Ves= 10, 1 | 120 | ns Tum-Off Delay Time Roe=500 || | [1s | | | a | os | Total Gate Charge 1 a | | [a | 60 | ac | saesoueciae | weet 1 | Gate-Source Charge | Os _| Ves = 10V | fel | nC Gate-Drain Charge | Oa: _| | fad fac | 6-78

Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconduetance Variation Figure 8. Body Diode Forward Voltage

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Figure 9. Gate Charge Figure 10. Maximum Safe

Figure 11. Switching Test Circuit Figure 12. Switching Waveforms

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Figure 13. Normalized Thermal Transient Impedance Curve