CEFA101-G_12 COMCHIP | Alldatasheet
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Technical content
Features
-Ideal for surface mount applications. -Easy pick and place. -Plastic package has Underwriters Lab. flammability classification 94V-0. -Super fast recovery time for high efficient. -Built-in strain relief. -Low forward voltage drop. Mechanical data -Case: JEDEC DO-214AC, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: Color band denotes cathode end. -Approx. weight: 0.063 grams CEFA101-G Thru. CEFA105-G Maximum Ratings and Electrical Characteristics Dimensions in inches and (millimeter) DO-214AC (SMA) QW-BE001 CEFA101-G Comchip Technology CO., LTD. 0.110(2.79) 0.086(2.18) 0.067(1.70) 0.051(1.29) 0.209(5.31) 0.006(0.15) 0.008(0.20) 0.004(0.10) 0.059(1.50) 0.035(0.89) 0.091(2.31) 0.067(1.70) 0.180(4.57) 0.160(4.06) Max. repetitive peak reverse voltage Max. DC blocking voltage Max. RMS voltage Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. average forward current Max. instantaneous forward voltage at 1.0A Reverse recovery time O Max. DC reverse current at TA=25 CO rated DC blocking voltage TA=100 C Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature CEFA102-G CEFA103-G CEFA104-G CEFA105-G UnitsSymbolParameter VRRM VDC VRMS IFSM IO VF Trr IR RθJL TJ TSTG 100 100 0.92 200 200 140 1.0 5.0 200 150 -55 to +150 400 400 280 1.25 600 600 420 1.3 V V V A A V nS μA O C/W O C O C
RATING AND CHARACTERISTIC CURVES (CEFA101-G thru CEFA105-G) Percent of Rated Peak Reverse Voltage (%) 1501209060300 Fig.1 Reverse Characteristics 0.01 0.1 100 Rever e urr n (μ )s C e t A Forward Voltage (V) Fig.2 Forward Characteristics 0.001 o w rd C rren (A)F r a u t 0.01 0.1 0.8 Reverse Voltage (V) 0.01 Fig.3 Junction Capacitance J n ti n apacian ce(p )u c o C t F 0.1 1 10 100 Number of Cycles at 60Hz Fig.4 Non-repetitive Forward Surge Current Peak F orward Surge C urrent A )( Comchip Technology CO., LTD. Page 2 REV:A O TJ=125 C O TJ=75 C O TJ=25 C 0.4 1.2 2.01.6 CEFA101-G~103-G CEFA104-G CEFA105-G O TJ=25 C Pulse width 300μS 4% duty cycle CEFA101-G~103-G CEFA104-G~105-G O TJ=25 C f=1MHz and applied 4VDC reverse voltage 1 10 100 O TJ=25 C 8.3ms single half sine wave, JEDEC method Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE (+) 25Vdc (approx.) (-) D.U.T. NON- INDUCTIVE OSCILLLISCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) (+) (-) NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF. 2. Rise time=10ns max., input impedance=50Ω. trr Set time base for 50 / 10nS / cm 1cm -1.0A -0.25A +0.5A Fig.6 Current Derating Curve O Ambient Temperature ( C) Average Forward Current (A) 0 5025 75 100 150125 175 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Single phase Half wave 60Hz SMD Efficient Fast Recovery Rectifiers